PAM XIAMEN offers high-quality Al2O3 (Sapphire).
A-plane (11-20)
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20), 2 SP
Al2O3 – Sapphire Wafer 5x5x0.5 mm, A plane (11-20),1 SP
Al2O3 – Sapphire Wafer 10x5x0.5 mm , A plane (11-20), 1 SP
Al2O3 – [...]
2019-04-16meta-author
PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html.
The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field [...]
2024-04-17meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer.
4″ Si substrate wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um
Back [...]
2019-07-05meta-author
Super Low Stress Nitron on Silicon Wafers
PAM XIAMEN offers Super Low Stress Nitron on Silicon Wafers
When you need the thickest nitride Super Low Stress Nitride is the nitride to use.
We can deposit up to 4 micron of nitride using this method of nitride deposition.
SPECIFICATIONS
Thickness range: 50Å [...]
2019-02-11meta-author
PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
PAM XIAMEN offers Bi12GeO20 (BGO20).
Bi12GeO20 – BGO20 (001) 10x5x1.0 mm 1 side polished
Features:
Crystal Bi12GeO20 ( BGO20) — New generation acousto-optic crystal Wafer size: 10 x 5 x1.0 mm thick
Orientation: (001) +/-0.5o
Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
1 sides polished
Package: Each wafer is packed in [...]
2019-04-17meta-author