Cadmium zinc telluride (CdZnTe) is now established as a popular choice of sensor for the detection of γ-rays and hard x-rays, leading to its adoption in security, medical and scientific applications. There are still many technical challenges involving the deposition of high-quality, uniform metal contacts [...]
2019-11-26meta-author
PAM XIAMEN offers LiAlO2 Lithium Aluminate Crystal Substrates.
Main Parameters
Crystal structure
M4
Unit cell constant
a=5.17 A c=6.26 A
Melt point(℃)
1900
Density
2.62(g/cm3)
Hardness
7.5(mohs)
Size
10×3,10×5,10×10,15×15,20×15,20×20,
Ф15,Ф20,Ф1″,Ф2″, Ф2.6″
Thickness
0.5mm, 1.0mm
Polishing
Single or double side polished
Crystal [...]
2019-03-13meta-author
The PN junction material has a single conductivity, which is a characteristic utilized by many devices in electronic technology, such as semiconductor diodes and bipolar transistors. PAM-XIAMEN can offer silicon PN junction wafers. Here we just list a specific epitaxial structure of photodiode application for your reference. More silicon epitaxial [...]
2023-09-28meta-author
Multilayer structures of cobalt and silicon have been deposited as an ohmic contact on n-type 4H-SiC substrates in order to obtain lower contact resistance and higher thermal stability. The metal structures were prepared by using electron beam evaporation on top of the silicon face [...]
2019-08-06meta-author
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of InP substrate and other related products and services, can offer InP substrate for Fiber optics network components. Our monocrystalline InP crystal substrate has excellent properties, a series of doping experiments have determined the effective segregation coefficient [...]
2017-08-18meta-author
The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire
This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as [...]
2013-04-03meta-author