Highlights
•N-polar InAlN thin films were grown on GaN substrates by molecular beam epitaxy.
•Surface morphology transitioned from quasi-3D to step-flow at high temperature.
•Indium saturation was observed for increasing indium flux at high temperature.
•Increased aluminum flux helped increase indium incorporation efficiency.
•N-polar InAlN films with 0.19 nm [...]
By analyzing the MOSFET, it is known that the switch can be realized by controlling the change of the PN junction.
Field effect transistor
Type
Name
Principle
FET
JFET
Junction
PN junction
MOSFET
Metal oxide semiconductor
MESFET
Metal semiconductor
Schottky junction
MODFET
Modulation doping
HEMT
High electron mobility
In fact, a Schottky junction can be realized through another structure.
Definitions of Junctions
Starting from [...]
2021-04-02meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer-8
Diameter: 150 mm
N type
Orientation: (100)
Thickness: 675±10μm
Resistivity 6,000-10,000Ωcm
Double Side Polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns.
2 inch in diameter wafers
Monocrystalline silicon with insulating oxide
Polishing: one-sided for microelectronics
Thickness: 675 +/- 20 microns
TTV <15 microns,
Warping <35 microns
For more information, please visit our website: [...]
2019-07-01meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
280
P/E
0.5-0.6
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/E
0.08-0.10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
0.073-0.090
SEMI Prime,
p-type Si:B
[100]
2″
250
P/P
0.02-0.04
SEMI Prime
p-type Si:B
[100]
2″
225
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
1000
P/P
0.015-0.045
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
0.008-0.095
SEMI Prime
p-type Si:B
[100-4°]
2″
300
P/P
0.003-0.004
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
300
P/E
0.0026-0.0029
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.0023-0.0029
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.001-0.006
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
280
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
Prime, NO Flats
p-type Si:B
[100]
2″
500
P/P
0.001-0.005
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
300
P/E
20-25
SEMI Prime
p-type Si:B
[111]
2″
380
P/P
10-20
SEMI Prime
p-type Si:B
[111-2° towards[112]]
2″
1000
P/P
10-30
SEMI Prime
p-type Si:B
[111]
2″
500
P/P
2.4-2.6
SEMI Prime
p-type [...]
2019-03-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer-17 as follows, while silicon wafer list includes, but not limited to the following.
Silicon wafers, per SEMI Prime,
P/P 4″Ø×300±25µm,
p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm,
TTV<10µm, Bow<40µm, Warp<40µm,
Both-sides-polished, SEMI Flats (two),
Primary Flat length 32.5±2.5mm, orientation 110±1°。
Secondary Flat length 18±2mm, orientation 90°±5°
Sealed in Empak cassette
For [...]
2019-11-26meta-author