PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
The SiC wafer application fields are mainly divided into the electronic power field, the radio frequency field, the photoelectric field, and other fields. Among them, the electronic power field and the radio frequency field are the most important applications, and the advantages of silicon carbide wafer usage are [...]
2021-04-13meta-author
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is [...]
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
20±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
30
n- Si:P
4.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
9.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
12±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
11±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
36
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
41
n- Si:P
25±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42
n- Si:P
20.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42.5
n- Si:P
17±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
52.5
n- Si:P
12.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
56
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
70
n- Si:P
73±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
72
n- Si:P
12.5±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
73
n- Si:P
84±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
13±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
11±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
12±10%
n/n+
3″Øx375μm
n- Si:As[111]
0.001-0.005
P/E
85
n- [...]
2019-03-08meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC
Published by:
Subing Yang;Sakiko Tokunaga;Minako Kondo;Yuki Nakagawa;Tamaki Shibayama;
a Graduate School of [...]
2019-12-02meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Evidence for Deep Acceptor Centers in Plant Photosystem I Crystals
Published by:
Irina Volotsenko ; Michel Molotskii ; Anna Borovikova ; Nathan [...]
2019-12-09meta-author