Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC

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Article title:

Non-destructive evaluation of the strain distribution in selected-area He+ ion irradiated 4H-SiC

Published by:

Subing Yang;Sakiko Tokunaga;Minako Kondo;Yuki Nakagawa;Tamaki Shibayama;

a Graduate School of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan
b Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido 060-8628, Japan

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Abstract

Residual strain in silicon carbide (SiC) greatly affects its physical and chemical properties and thus the performance of SiC-based devices. Herein, the detailed strain distribution in selected-area He+ ion-irradiated 4H-SiC was evaluated using the non-destructive techniques of electron backscattering diffraction and confocal Raman microscopy (CRM). In addition to the strain introduced in the irradiated area, excessive strain induced by irradiation-induced swelling also extended into the surrounding substrate. Furthermore, great compressive strain was concentrated around the interface between the irradiated and unirradiated areas. In the strain-introduced substrate, an A1(LO)/A1(LOPC) peak variation was detected by CRM, suggesting a variation of the carrier density.

Subject(s): ImplantationElectron backscattering diffraction (EBSD)Raman spectroscopyResidual strain

Article abstract for Using Wafer from Xiamen Powerway Advanced Material Co. Ltd. (PAM-XIAMEN) or Powerway Wafer Co.,Limited

“… 2. Experimental procedure. Herein, an n-type 4H-SiC (0001) single-crystal substrate
(Xiamen Powerway Advanced Material Co., Ltd, Xiamen, China) about 10 × 10 ×
0.33 mm 3 was used. This substrate was irradiated with 100 …”

Source:

https://www.sciencedirect.com/science/article/pii/S0169433219328673#!

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PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect.

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