5-5-3 SiC Contacts and Interconnect
All useful semiconductor electronics require conductive signal paths in and out of each device as well as
conductive interconnects to carry signals between devices on the same chip and to external circuit
elements that reside off-chip. While SiC itself is theoretically capable [...]
2018-06-28meta-author
5-7-1 Future Tied to Material Issues
The previous sections of this chapter have already highlighted major known technical obstacles and immaturities that are largely responsible for hindered SiC device capability. In the most general terms, these obstacles boil down to a handful of key fundamental [...]
2018-06-28meta-author
5-5-5 SiC Insulators: Thermal Oxides and MOS Technology
The vast majority of semiconductor-integrated circuit chips in use today rely on silicon metal-oxide–
semiconductor field-effect transistors (MOSFETs), whose electronic advantages and operational
device physics are summarized in Katsumata’s chapter and elsewhere . Given the extreme
usefulness and success of [...]
2018-06-28meta-author
1-3.Mohs Hardness
Rough measure of the resistance of a smooth surface to scratching or abrasion, expressed in terms of a scale devised(1812)by the German mineralogist Friedrich Mohs. The Mohs hardness of a mineral is determined by observing whether its surface is scratched by a substance [...]
2018-06-28meta-author
5-6 SiC Electronic Devices and Circuits
This section briefly summarizes a variety of SiC electronic device designs broken down by major application areas. SiC process and material technology issues limiting the capabilities of various SiC device topologies are highlighted as key issues to be addressed [...]
2018-06-28meta-author
3-2. Scratches
Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.
2018-06-28meta-author