3-2. Scratches
Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.
3-2. Scratches
Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.
2-14.Masking Defects also referred to as “Mound” When one defect prevents the detection of another defect, the undetected defect is called the masked defect. A distinct raised area above the wafer frontside surface as viewed with diffuse illumination.
5-5-4 Patterned Etching of SiC for Device Fabrication At room temperature, there are no known conventional wet chemicals that etch single-crystal SiC. Most patterned etching of SiC for electronic devices and circuits is accomplished using dry etching techniques. The reader should consult References 122–124 which contain summaries [...]
1-3.Mohs Hardness Rough measure of the resistance of a smooth surface to scratching or abrasion, expressed in terms of a scale devised(1812)by the German mineralogist Friedrich Mohs. The Mohs hardness of a mineral is determined by observing whether its surface is scratched by a substance [...]
5-7-1 Future Tied to Material Issues The previous sections of this chapter have already highlighted major known technical obstacles and immaturities that are largely responsible for hindered SiC device capability. In the most general terms, these obstacles boil down to a handful of key fundamental [...]
5-4-2 Growth of 3C-SiC on Large-Area (Silicon) Substrates Despite the absence of SiC substrates, the potential benefits of SiC hostile-environment electronics nevertheless drove modest research efforts aimed at obtaining SiC in a manufacturable wafer form.Toward this end, the heteroepitaxial growth of single-crystal SiC layers on [...]
5-2-2-2 SiC Semiconductor Electrical Properties Owing to the differing arrangement of Si and C atoms within the SiC crystal lattice, each SiC polytype exhibits unique fundamental electrical and optical properties. Some of the more important semiconductor electrical properties of the 3C, 4H, and 6H SiC polytypes are [...]
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