PAM XIAMEN offers 2004nm laser diode wafers.
Available Center Wavelengths: 1970 nm – 2051 nm
Wavelength Tolerance: +/- 1nm
CW Output Power (typical): 3mW (out of fiber)
SMSR (typical): >40 dB
Optical Linewidth: < 1.5 MHz
Temperature Tuning Coefficient (typical): 0.1 nm/°C
Current Tuning Coefficient (typical): 12 pm/mA
Slope Efficiency (typical): 0.12 [...]
2019-03-13meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1
6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm
PARAMETER
SPECIFICATION
GENERAL CHARACTERISTICS
1
Growth Method
FZ Gas Dope
2
Crystal Orientation
(100)
3
Conductivity Type
n
4
Dopant
Phosphorus
5
Nominal Edge Exclusion
6 mm
ELECTRICAL CHARACTERISTICS
6
Resistivity
2000 – 7000 Ωcm
7
Life Time
>1500 µsec
CHEMICAL CHARACTERISTICS
8
Oxygen Concentrations
< 2xE16 at/cm3
9
Carbon Concentrations
< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10
Front Surface Condition
Polished, [...]
2020-04-17meta-author
PAM XIAMEN offers TiO2(Anatase) substrate.
TiO2 Anatase (001) 5x5x0.5mm, 1 SP”
TiO2 Anatase (100) 5x5x0.5mm, 1 SP
TiO2 Anatase (101) 5x5x0.5mm, 1 SP
TiO2 Anatase (103) 5x5x0.5mm, 1 SP
TiO2 Anatase (110) 5x5x0.5mm, 1 SP
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-05-20meta-author
Epitaxial InGaAsP / InP photodiode wafer is offered for making InP-based optoelectronic devices. For such devices, InGaAsP quaternary material is commonly grown on InP substrate as ohmic contact layers. Quaternary InGaAsP thin film epitaxial on InP is sensitive to InP luminescence. InGaAsP / InP [...]
2022-04-15meta-author
PAM-01C2 is a hemisphere CZT based probe in a super small size. It can detect X-ray and low energy γ-ray in a high resolution.
PAM-01C2 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert X/γ-ray into exponential decay signals. Working [...]
2019-04-23meta-author
PAM-XIAMEN can offer EFG grown Gallium Oxide (chemical formula: Ga2O3) wafer. Currently, the third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received widespread attention. High hopes are placed on the application of SiC and GaN in the high power, high temperature, high pressure occasions(like new energy [...]
2021-04-19meta-author