The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
2020-02-11meta-author
Flexible semiconductor Ge thin film grown on mica by van der Waals epitaxy. The film experiences no degradation in its electrical properties even after repeated bending. Credit: Aaron Littlejohn, Rensselaer Polytechnic Institute
Germanium, an elemental semiconductor, was the material of choice in the early history [...]
2018-05-08meta-author
GaN epi layers are usually grown by MOCVD on various substrates, such as sapphire, Si and SiC substrate. The choice of substrate varies according to the needs of the applications. So for RF MOSFET (Metal Oxide Semiconductor Field Effect Transistor) application, SiC substrate, which [...]
2022-03-21meta-author
The wide band gap semiconductor materials represented by GaN and SiC have the advantages of fast electron saturation drift and strong radiation resistance, and have a wide range of applications in solid-state lighting, electronic power and mobile communications. Among them, solid-state lighting is of [...]
2022-07-13meta-author
Custom Silicon Wafers
PAM XIAMEN offers custom silicon Wafers from thinning or reclaiming substrates that you already have to making silicon cubes.
We can laser cut or dice wafers into diameters and dimensions that you need.
Below is just some of the custom silicon wafer services that [...]
2019-02-13meta-author
PAM XIAMEN offers4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3
4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 200 ± 25 µm,
orientation (100)(+/-0.5°),
2-side polished,
p or n type (no matter) ,
? Ohm cm (no matter),
Particle: 0.33µm, <qty30
ttv ≤ 10um,warp ≤30um
One [...]
2019-09-20meta-author