HgCdTe thin films have been deposited on CdZnTe/Si(1 1 1) substrates by pulsed laser deposition (PLD). A Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The effects of CdZnTe buffer layer thickness which varied with the deposition time in the range from [...]
N-Type Silicon Substrates
PAM XIAMEN offers n-type silicon wafers in stock.
N-type Silicon
50.8mm N-type Arsenic Doped (100) 0.001-0.005 ohm-cm 280um SSP In stock
76.2mm N-type Phosphorous Doped (100) 1-10 ohm-cm 380um SSP In stock
100mm N-type Phosphorus Doped (100) 10-20 ohm-cm 280um DSP In stock
150mm N-type Antimony Doped [...]
2019-02-14meta-author
Optical characterization of InAs film grown on SnO2 substrate by the electrodeposition technique
Indium arsenide films have been grown by an electrodeposition process at low temperature on a tin oxide (SnO2) substrate. X-ray diffraction studies showed that the as-grown films are poorly crystallized and heat [...]
2018-03-05meta-author
PAM XIAMEN offers 4″ Diameter Wafer.
4″ Diameter Wafer
Ge N-type 4” ,undoped
Ge Wafer (111) 4″ dia x 0.5 mm, 1SP, N type ( un- doped)
Ge Wafer (100) . Undoped, 4″ dia x 0.5 mm, 1SP
Ge Wafer (100) . Undoped, 4″ [...]
2019-04-25meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 500±25um.
6″ Si wafer
DSP
N-type
<111>
thickness 500±25um
resistivity40-100Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-07-01meta-author
PSA-01 is a portable nuclear spectrum acquisition instrument, which integrates main amplifier,multi-channel pulse analyzer and high-voltage. Its gain, high-voltage and shaping time are adjustable. With upper computer software, it can acquit nuclear spectrum, analyzing, processing and storage data. Its built-in Li-battery could charge more [...]
2019-04-25meta-author