The most basic and key parameters of SiC epitaxial materials are the thickness and doping concentration uniformity.In fact, the epitaxial parameters mainly depend on the device design. For example, the epitaxial parameters are different according to the different voltage levels of the devices. Generally, [...]
2020-09-22meta-author
Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]
2022-11-29meta-author
PAM XIAMEN offers MgO Magnesium Oxide Single Crystal.
Applications of MgO single crystal substrates:
Substrate for high temperature superconducting film formation, such as YBCO film (filter used for communication and space observation)
Substrate for ferroelectric film formation, such as PZT film (infrared ray sensor used for [...]
2019-03-14meta-author
PAM XIAMEN offers Photographic Film.
Various Technical Parameters
Max plotted area
24″*35″
Thickness
0.18mm
Resolution
6000dpi、1200dpi、1600dpi、2500dpi
Positioning accuracy
±10μm
Repetitive accuracy
±3μm
Min Critical Dimension
25μm at 6000 and 12000dpi
12μm at 16000 and 25000dpi
CD Tolerance
Control ±3μm or ±4μm
Main application areas:
LCD, PCB, VFD, BGA, FPC and other industries
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-07-04meta-author
PAM XIAMEN offers 4″ FZ Prime Silicon Wafer.
4”FZ P-type
orientation 111
thickness 400±15
Resistivity 15000Ωcm
polished side 1
Acid etched side 2
life time 1000
SEMI STD
DISLOCATION DENSITY 500 max/ cm2
TTV/TAPER 12μm max
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-06-24meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
90
n- Si:P
41±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
18
n- Si:P
5±10%
n/n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
96
n- Si:P
30±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
21±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
16 ±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
100
n- Si:P
20±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
135
n- Si:P
35±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
140
n- Si:P
31±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
38±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
145
n- Si:P
25±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
150
n- Si:P
44±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
158
n- Si:P
67±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
8
n- Si:P
0.63±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
22.5
n- Si:P
0.07±10%
n/n+
3″Øx381μm
n- Si:Sb[111]
0.005-0.020
P/E
30
n- Si:P
6.75±10%
n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
75
n- Si:P
40±10%
n/n/n+
3″Øx330μm
n- Si:Sb[111]
0.005-0.018
P/E
25
n- Si:P
2.5±10%
n/n/n+
For [...]
2019-03-08meta-author