Photographic Film

PAM XIAMEN offers Photographic Film.

Various Technical Parameters

Max plotted area 24″*35″
Thickness 0.18mm
Resolution 6000dpi、1200dpi、1600dpi、2500dpi
Positioning accuracy ±10μm
Repetitive accuracy ±3μm
Min Critical Dimension 25μm at 6000 and 12000dpi
12μm at 16000 and 25000dpi
CD Tolerance Control ±3μm or ±4μm

 

Main application areas:
LCD, PCB, VFD, BGA, FPC and other industries

 

 

 

 

 

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-07-04

Share this post

Related Posts

100mm (4 Inch) Silicon Wafers-2

PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2383 n–type Si:P [111] ±0.5° 4″ 630 P/G FZ >7,000 SEMI Prime, 1Flat, in Empak, Lifetime>1,000μs, Back–side Fine Ground PAM2384 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ >7,000 SEMI, 1Flat, Lifetime>1,600μs, in Empak cassettes of 6 and 8 wafers PAM2385 n–type Si:P [111] ±0.5° 4″ 675 P/E FZ [...]

2019-02-19meta-author
SiC epitaxy growth using chloride-based CVD

Abstract The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 μm/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately [...]

2017-09-05meta-author
3″ Silicon Wafer-6

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [5,5,12] ±0.5° 3″ 380 P/E 1-10 SEMI Prime p-type Si:B [211] ±0.5° 3″ 525 P/P >10 SEMI Prime p-type Si:B [211] ±0.5° 3″ 525 P/E >10 SEMI Prime p-type Si:B [111-28° towards[001]] ±0.5° 3″ 400 P/E >20 SEMI TEST (Half of wafers polished on wrong side, some have etch patterns), Primary Flat @ <112>, hard cst p-type Si:B [111-4°] ±0.5° 3″ 380 P/E 8-12 SEMI Prime p-type Si:B [111-4°] ±0.5° 3″ 380 P/E 8-12 SEMI Prime p-type Si:B [111] ±0.5° 3″ 508 E/E 0.792-1.008 SEMI TES, TTV<2μm, Epak cst p-type Si:B [111-4°] [...]

2019-03-06meta-author
Black Phosphorus – 2D crystal

PAM XIAMEN offers Black Phosphorus – 2D crystal. Black Phosphorus Crystal,(2-2.5) mm x (2-2.5) mm x 0.1 mm, as grown Black Phosphorus is a semiconductor with a band gap of around 0.3 eV. The layers are stacked together via van der Waals interactions. A [...]

2019-04-17meta-author
LED Epiwafer Specification

LED Epiwafer Specification https://www.powerwaywafer.com/led-epiwafer.html For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered [...]

2019-03-20meta-author
GRAPHENE CVD FILMS AND GRAPHENE OXIDE

PAM XIAMEN offers Graphene CVD Films and Graphene Oxide. PAM XIAMEN is a based supplier of high quality graphene films (mono-layer or multi-layer graphene) and graphene oxide products (dry powder or dispersion in water) to both research and industry customers. Our customers include leading research [...]

2019-03-12meta-author