Etching is a technique used for micromachining to chemically remove layers from the surface of a wafer during manufacturing. Etching techniques can be divided into wet etching and dry etching. PAM-XIAMEN can provide silicon etching wafer for your applications.
1. Wet Chemical Etching
The mechanism of [...]
2022-05-30meta-author
PAM-XIAMEN can offer SiC substrate and epitaxy wafer for fabricating IGBT devices. The emergence of the third-generation wide-bandgap semiconductor SiC wafer has shown stronger competitiveness in the fields of high voltage, high temperature, and high power. The n-IGBT (insulated gate bipolar transistor) is further [...]
2022-04-14meta-author
As an important part of new materials, semiconductor materials are the top priority of all countries in the world for the development of electronic information industry. It supports the development of localization of electronic information industry and is of great significance to industrial structure [...]
2019-04-02meta-author
Highlights
•AlGaN/GaN HEMT on SiC substrate is presented to improve the electrical operation.
•The depletion region of structure is amended using a multiple recessed gate.
•A gate structure is proposed to be able to control the thickness of the channel.
•RF parameters are considered and are improved.
In this [...]
PAM-XIAMEN can offer FZ neutron transmutation doping (NTD) silicon wafer with a uniform doping concentration and uniform radial resistivity distribution. At present, silicon material is still the most important basic material in the electronic information industry. More than 95% of semiconductor devices and more [...]
2021-06-24meta-author
Hyung Koun Cho∗
Department of Metallurgical Engineering, Dong-A University, Busan 604-714
Jeong Yong Lee
Department of Materials Science and Engineering,
Korea Advanced Institute of Science and Technology, Daejon 305-701
We have investigated the formation of V-shaped pits in nitride films such as InGaN/GaN and AlGaN/GaN grown on sapphire substrate [...]
2021-12-22meta-author