Measurement of threading dislocation densities in GaN by wet chemical etching
We demonstrate a technique based on wet chemical etching that enables quick and accurate evaluation of edge- and screw/mixed-type threading dislocations (TDs) in GaN. Large and small etch pits are formed by phosphoric acid [...]
2013-05-16meta-author
A comparative study of the bonding energy in adhesive wafer bonding
Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. [...]
2018-07-17meta-author
InGaAs quantum well (QW), as a commonly used two-dimensional material in near-infrared band, has important applications in semiconductor lasers, solar cells and other devices. In the field of semiconductor lasers, InGaAs/GaAs quantum well expands the luminous wavelength of GaAs (0.85~1.1 μm) and is widely [...]
2022-10-28meta-author
Indium antimonide (InSb) thin film magnetoresistor, which is the core sensitive element of magnetoresistance (MR) sensor, is provided from PAM-XIAMEN with characteristics of non-contact measurement, small size, high reliability, high signal-to-noise ratio and wide frequency response (0-100kHz). InSb magnetoresistance is a new type of [...]
2021-09-14meta-author
PAM XIAMEN offers 1″ silicon wafers.
If you don’t see what you need, pleaes email us your specs and quantity.
Item
Dia
Thickness (um)
Orientation
Type
Dopant
Resistivity
(Ohm-cm)
Polish
Remark
PAM1901
25.4mm
20000um
<111>
P
B
>1000
DSP
FZ
PAM1902
25.4mm
400um
<100>
P
B
ANY
SSP
Thickness is: 400+/-100um.
PAM1903
25.4mm
500um
<100>
ANY
SSP
Wafers have particles. Wafers sold “As-Is”.
PAM1904
25.4mm
280um
<111>
Undoped
Undoped
>2000
SSP
Intrinsic FZ
PAM1905
25.4mm
73.5um
<100>
Undoped
Undoped
>5000
DSP
FZ, Float Zone
PAM1906
25.4mm
500um
<100>
P
B
.01-.05
DSP
NO flats, COMPLETELY round. Minimum Order Quantity 5 wafers.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM1907
p-type Si:B
[100]
1″
280um
P/E
0-100 ohm-cm
SEMI, 1Flat, Soft cst
PAM1908
Intrinsic Si:-
[111]
1″
280um
P/E
FZ [...]
2019-02-21meta-author
Aluminium gallium arsenide epi wafer (AlGaAs or AlxGa1−xAs) is a semiconductor wafer material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula stands a number between 0 and 1 – this indicates an arbitrary alloy [...]
2020-07-17meta-author