PAM XIAMEN offers 12 inch Si dummy wafer:
Surface:double side polished;
Thickness ≥750um;
V Notch(SEMI STD);
Slight scratch (with no stains or heavy/deep scratches);
About the Si dummy wafer
According to different application scenarios in the fab, silicon wafers can be divided into two categories:
1.Prime Wafer, which is directly used for [...]
2021-04-22meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
76.2
N
Phos
FZ
-100
>3000
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
76.2
N
Phos
CZ
-100
350-400
P/E/OX
PRIME
76.2
N
As
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
N
Phos
FZ
-100
>3000
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/WTOx
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
400-450
P/E
PRIME
76.2
N
Phos
CZ
-100
450-500
P/P
PRIME
76.2
N
Phos
CZ
-100
500-550
P/E
PRIME
76.2
N
Phos
CZ
-100
950-1000
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
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Solar Silicon Wafers
PAM XIAMEN offers Solar Silicon Wafers.
Limiting Efficiency
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GaN thin films were grown on ZnO/c-Al2O3 with excellent uniformity over 2 in. diameter wafers using a low temperature/pressure MOVPE process with N2 as a carrier and dimethylhydrazine as an N source. 5 mm×5 mm sections of similar GaN layers were direct-fusion-bonded onto soda lime glass substrates [...]