Source: IEEE
If you need more information about SiC and GaN Wide Bandgap Device Technology ,
please visit our website: https://www.powerwaywafer.com/,
send us email a sales@powerwaywafer.com or powerwaymaterial@gmail.com
Source: IEEE
If you need more information about SiC and GaN Wide Bandgap Device Technology ,
please visit our website: https://www.powerwaywafer.com/,
send us email a sales@powerwaywafer.com or powerwaymaterial@gmail.com
What are Silicon Wafer Flats? PAM XIAMEN offers Silicon Wafer Flats Since Silicon Wafers look basically the same! Flats are cut into the edge of the wafers so users could determine the wafer’s dopant-type and orientation. Below is an example of silicon wafers flat specs: Spec. 2” 3” 100mm 125mm 150mm 200mm 300mm Diameter 2.000+/-.015” 3.000+/-.025” 100+/-.5mm 125+/-.5mm 150+/-.2mm 200+/-.2mm 300+/-.2mm 50.8+/-.38mm 76.2+/-.63mm Thicknes s 0.011+/-.001” 0.015+/-.001” 525+/-20 um [...]
A method for the annealing of a CdZnTe crystal is described in this paper. Pure Cd and Zn metals are used as annealing sources, which simultaneously provide exact Cd and Zn equilibrium partial pressures for CdZnTe at a certain temperature. Characterizations reveal that homogeneity [...]
SiC material has high displacement threshold energy and wide band gap, which enables the detector to work under high temperature and high radiation field. It can be applied to neutron fluence/energy spectrum measurement in strong radiation field, neutron fluence/energy spectrum measurement in high temperature [...]
PAM XIAMEN offers Moissanite Raw Crystal Silicon Carbide. High quality colorless raw Moissanite crystals (D-E-F color) from PAM XIAMEN are grown using advanced technologies. Gem grade Moissanite silicon carbide crystals are available in different sizes ranging from tens of grams to kilograms. What is Moissanite? In 1893, [...]
PAM-XIAMEN offers M Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN M-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation M plane (1-100) off angle toward A-axis 0 ±0.5° M plane (1-100) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
Targeted Stress LPCVD Nitride PAM XIAMEN offers Targeted Stress LPCVD Nitride Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications. Please provid us with your application for an immediate quote. For more information, please visit our website: https://www.powerwaywafer.com, send [...]
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