Lithium niobate (LiNbO3) wafer has excellent electro-optic, nonlinear and piezoelectric properties. With the advanced micro- and nanofabrication techniques, integrated photonics devices based on lithium niobate on insulator (LNOI) thin films have been extensively studied. In the future, high-performance LiNbO3 thin film prepared will support [...]
2020-03-10meta-author
PAM XIAMEN offers SBN crystal.
Strontium-Barium Niobate (SrxBa(1-x)Nb2O6) SBN crystal is an excellent optical and photorefractive material due to its excellent photorefractive, electro-optic, nonlinear optic, and dielectric properties. SBN crystal has a very large electro-optic coefficient up to 1400 pm/V. and is potential crystal [...]
2019-05-15meta-author
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-03meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
480
C/C
1-30
SEMI Test, UNPOLISHED WAFERS WITH EDGE CHIPS
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content ~1.0ppma
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content ~0.2ppma
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI Prime, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc
p-type Si:B
[100]
4″
500
P/P
1-50
SEMI [...]
2019-03-05meta-author
PAM-XIAMEN offers PSS patterned sapphire substrate for high brightness GaN based LED EPI growing application. The patterned sapphire substrate wafer is to grow a dry etching mask on the sapphire substrate. The mask is engraved by a standard photolithography process. Then, the sapphire is etched by ICP etching [...]
2021-04-28meta-author
PAM XIAMEN offers 6″ Prime EPI Wafer.
6″ EPI Wafer
diameter: 6″ (150 +-0,5 mm)
orientation: <100>
primary flat length: 57.5mm+/-2.5mm
primary flat: <110> +/- 1
no secondary flat
overall thickness 280-325μm
TTV <10um
WARP/BOW <50um
TIR <3um
EPI layer:
-type: n
-dopant: P [...]
2019-07-03meta-author