SBN crystal – Can’t Offer Temporarily

  • Home
  • News
  • SBN crystal – Can’t Offer Temporarily

SBN crystal – Can’t Offer Temporarily

PAM XIAMEN offers SBN crystal.

Strontium-Barium Niobate (SrxBa(1-x)Nb2O6) SBN crystal is an excellent optical and photorefractive material due to its excellent photorefractive, electro-optic, nonlinear optic, and dielectric properties. SBN crystal has a very large electro-optic coefficient up to 1400 pm/V. and is potential crystal for new generation E-O devices

SBN (001) 10x10x0.5 mm 2sp

Orientation: (001) +/-0.5 o
Size: 10mm x 10mm x 0.5 mm
Polish: two sides optical grade polished
Surface roughness:  < 5A

SBN (100) 10x10x0.5 mm 2sp

Orientation: (100) +/-0.5 o
Size: 10mm x 10mm x 0.5 mm
Polish: two sides optical grade polished
Surface roughness:  < 5A

PLEASE NOTE: Due to the rapid changes in the semiconductor wafer market and our production lines, our supply capacity will change with it, but the changes will not be shown on our website. So we reserve the right to explain all the wafer information on our website.

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-05-15

Share this post

Related Posts

(100) Oriented Silicon Wafers-1

PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2797 p-type Si:B [100] 4″ 220 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst PAM2798 p-type Si:B [100] 4″ 230 ±10 P/E FZ >10,000 SEMI Prime, 1Flat, Empak cst PAM2799 p-type Si:B [100-4° towards[110]] ±0.5° 4″ 525 P/E FZ [...]

2019-02-22meta-author
100mm Silicon Carbide

There are more than 200 silicon carbide crystal types in the world, among which the mainstream crystal type of current silicon carbide wafer production is 4H-SiC. Below specification of 100mm silicon carbide in PAM-XIAMEN are available: 1. Specifications of 100mm Silicon Carbide 4H N-type Specificationsof Silicon Carbide N-type 100mm Diameter – polytype 4H-SiC A type N-type SiC substrate Resistance 0.015 [...]

2020-03-06meta-author
Semi-insulating GaAs Substrate

PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application. 1. Specification of Semi-insulating GaAs Substrate 1.1 Semi-insulated GaAs Substrate PAM190425-GAAS Parameter Customer’sRequirements Guaranteed/Actual Values UOM GrowthMethod: VGF VGF — ConductType:. S-I-N S-I-N — Dopant: c doped c [...]

2020-05-26meta-author
850nm and 940nm infrared LED wafer

PAM-XIAMEN can offer 850nm and 940nm infrared LED wafer by MOCVD. 850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it [...]

2020-05-14meta-author
Titanium/Gold Schottky Contacts on P-Type GaAs Grown on (111)A and (100) GaAs Substrates Using Molecular Beam Epitaxy

The Schottky barrier heights of Ti/Au contacts on p-type GaAs, grown on (111)A and (100) GaAs substrates by molecular beam epitaxy, have been investigated by I-V and C-V techniques. Higher barrier heights are observed for contacts on (111)A GaAs films. Comparison between our results [...]

2019-10-21meta-author
4″CZ Prime Silicon Wafer-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer. 4″ Si substrate wafer Growth Method: CZ 100 +/- 0.5 mm diameter silicon Orientation <111> 4deg off P Type Boron doped 0.002 – 0.003 ohm cm Front side polished – Epi ready thickness 525 +/-25 um Back [...]

2019-07-05meta-author