PAM-XIAMEN offers (20-21) Plane N-GaN Freestanding GaN Substrate:
Item
PAM-FS-GAN(20-21)-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
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How Does Semiconductor Wafer Technology?
Edit by PAM-XIAMEN
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2020-04-21meta-author
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2022-04-06meta-author
PAM XIAMEN offers 6″ CZ Silicon Wafer
N Type/Arsenic doped
Orientation (100)
Thickness 625±15μm
Resistivity 0.002-0.004Ωcm
Flat one 47.5 ± 2.5, <110> ±1°
TTV≤10μm
TIR ≤5μm
STIR≤2μm (15mm*15mm)
Bow/Warp≤30μm
Front Side: Chemical Mechanical
Polished
Back side:
BSD Yes
Poly(Å) No
Oxide Back Seal(Å)5000±500 Å
Edge Oxide Strip(mm):0.8
Back side Laser Mark: No
Particle ≤10 @≥0.3㎛
METAL IMPURITIES:
≤ 2.5E10(Fe Cr Cu Ni)at/㎠
≤ 5E10(Al Zn [...]
2021-03-18meta-author