PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.
PG ribbon thickness 0.05mm
Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Auxiliary Heating Zones
Back surface:
Outer element [...]
2019-03-13meta-author
PAM XIAMEN offers 4″ Test Grade Silicon Wafer.
Can you quote the same silicon wafer but 100 wafer instead of 50 Need to be packed in 25 wafer pack with cleanroom paper separators
• 50 silicon wafers (reclaim or test) to serve as polish [...]
2019-06-28meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer-1
tem2, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: N type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: [...]
2020-03-25meta-author
After the growth, the silicon carbide single crystal is crystal ingot with surface defects, which cannot be directly used for epitaxy. Therefore, it requires chemical mechanical polishing on silicon carbide. Among the processing skills, spheronization makes the crystal ingot into a standard cylinder; wire [...]
2021-04-02meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime,
n-type Si:P
[111]
2″
500
P/E
2.2-3.8
SEMI Prime,
n-type Si:P
[111]
2″
300
P/E
1-10
SEMI Prime, , TTV<5μm
n-type Si:P
[111]
2″
500
P/E
1-10
SEMI Prime,
n-type Si:P
[111] ±0.5°
2″
6000
P/E
1-10
SEMI Prime, Individual cst
n-type Si:Sb
[111] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime,
n-type Si:Sb
[111-3.5°] ±0.5°
2″
300
P/E
0.05-0.09
SEMI Prime, , in hard cassettes of 5 & 8 wafers
n-type Si:Sb
[111]
2″
2900
P/P
0.013-0.015
Prime, NO Flats, Individual cst
n-type Si:Sb
[111-2.5°] ±0.5°
2″
280
P/E
0.012-0.017
SEMI,
n-type Si:As
[111] ±0.5°
2″
279
P/E
0.001-0.005
SEMI Prime
p-type [...]
2019-03-07meta-author
Photoluminescence-based material quality diagnostics in the manufacturing of CdZnTe ionizing radiation sensors
A photoluminescence method was used for characterization of crystalline perfection of CdZnTe single crystals in the different stages of an up-to-date process of ionizing radiation sensor production. It was shown that the point [...]