

,please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected].
,please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected].
PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]
Colleges and universities are not only the gathering place of innovative talents, but also the source of innovation achievements. PAM-XIAMEN has collected the research and development (R&D) expenditure rankings of U.S. higher education institutions in 2019~2020. As a leading manufacturer of semiconductor materials, PAM-XIAMEN is [...]
Single crystal diamond for sale from PAM-XIAMEN is grown by chemical vapor deposition (CVD), which is a method of decomposing hydrogen and hydrocarbon gas into hydrocarbon active groups at high temperature, and depositing diamond on the substrate material under certain conditions. Theoretically, the method is [...]
PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure: 1. GaAs HEMT Epitaxial Wafer Structures Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT): HEMT [...]
PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] ±0.5° 3″ 415 ±15 E/E FZ 2,000-5,000 SEMI Prime, Lifetime>1,500μs n-type Si:P [111] ±1° 3″ 508 E/E FZ 182-196 SEMI Test, TTV<3μm Intrinsic Si:- [100] 3″ 300 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 300 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 380 P/E FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 380 P/E FZ >20,000 SEMI Test, unpolished side has stain Intrinsic Si:- [100] 3″ 380 P/E FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 500 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [100] 3″ 500 P/P FZ >20,000 SEMI Prime, Front Side Prime, back side Test Intrinsic Si:- [100] 3″ 650 P/P FZ >10,000 SEMI Prime, with LM, TTV<2μm Intrinsic Si:- [100] 3″ 700 P/P FZ >10,000 Test, scratrches and stains. [...]
A process model of wafer thinning by diamond grinding This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding [...]