

,please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected].
,please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected].
P-type silicon carbide substrate is generally used to make power devices, such as insulated gate bipolar transistors (IGBT, Insulate-Gate Bipolar Transistor). IGBT= MOSFET+BJT, it is a non-on or off switch. MOSFET=IGFET (Metal Oxide Semiconductor Field Effect Transistor, or Insulated Gate Field Effect Transistor). BJT (Bipolar [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 4″ 480 C/C 1-30 SEMI Test, UNPOLISHED WAFERS WITH EDGE CHIPS p-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content (0.2-0.9)E16/cc per ASTM F1319, Oxygen content (9.4-8.8)E17/cc p-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content ~1.0ppma p-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content ~0.2ppma p-type Si:B [100] 4″ 500 P/P 1-50 SEMI Prime, Carbon content (1.3-2.2)E16/cc per ASTM F1319, Oxygen content (7.9-7.7)E17/cc p-type Si:B [100] 4″ 500 P/P 1-50 SEMI [...]
PAM-XIAMEN offers (20-2-1) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-2-1)-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
The quasi-steady state photo conductance technique is employed to probe effective minority carrier lifetime (τ eff) modifications after integrating silver nanoparticles (Ag NPs) on n-type and p-type silicon wafers with a native oxide surface. Our observations reveal that τ eff modification is very sensitive [...]
P type GaAs(Gallium Arsenide) Wafer PAM XIAMEN offers p type GaAs(100) Zn-doped crystal Wafer. 1.Wafer List: GF-GaAs (100) orientation, Zn-doped 10x10x0.625 mm, single side polished. GaAs Wafer – Growing Method: VGF (100) Zn doped P-type, , 2″x0.5 mm, single side polished, (1-5) x 10^19 /cm^3 [...]
PAM XIAMEN offers Lead Foil Tape. Lead Foil Tape: 2″ W x 0.0063″ Thick x 36 Yard length 100% pure lead foil tape coated with a compounded synthetic rubber adhesive system which exhibits excellent adhesion to a wide variety of surfaces, especially to metal, [...]