2-32.Semi-insulating
Semi-insulating Doping with the impurities vanadium creates semi-insulating material of silicon carbide.
2018-06-28meta-author
2-15.Orange Peel
Visually detectable surface roughening when viewed under diffuse illumination.
2018-06-28meta-author
5-4-4-2 SiC Epitaxial Growth Polytype Control
Homoepitaxial growth, whereby the polytype of the SiC epilayer matches the polytype of the SiC substrate, is accomplished by “step-controlled” epitaxy . Step-controlled epitaxy is based upon growing epilayers on an SiC wafer polished at an angle (called the [...]
2018-06-28meta-author
5-6-4-1 SiC High-Power Rectifiers
The high-power diode rectifier is a critical building block of power conversion circuits. Recent reviews of experimental SiC rectifier results are given in References 3, 134, 172, 180, and 181. Most important SiC diode rectifier device design trade-offs roughly parallel well-known [...]
2018-06-28meta-author
Most SiC electronic devices are not fabricated directly in sublimation-grown wafers, but are instead fabricated in much higher quality epitaxial SiC layers that are grown on top of the initial sublimation grown wafer. Well-grown SiC epilayers have superior electrical properties and are more controllable [...]
2018-06-28meta-author
2-36.Reclaim Grade
Reclaim Grade:A lower quality wafer that has been used in manufacturing and then reclaimed , etched or polished, and then used a second time in manufacturing.
2018-06-28meta-author