PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips:
1. Specifications of SiC Chip Substrate
No 1. PAM200508-SIC-AU
10×10mm SiC substrate / Ti(0.1um)-Ni(0.1um)-Au(2um), n type.
Grade: dummy
Thickness: approx. 350um
Backside surface: with metal films of Ti-Ni-Au
Metal thickness: Ti(0.1um)-Ni(0.1um)-Au(2um),
No 2. SiC Wafer with [...]
2020-07-17meta-author
PAM-XIAMEN, one of leading silicon wafer producers, can offer 4 inch N type Sb doped Silicon wafer. As an important substrate for epitaxial growth, heavily doped antimony silicon wafers are widely used in integrated circuit manufacturing.
1. Specification of 4 inch Sb Doped Si wafer [...]
2021-06-25meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/P
1-100
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
525
P/E
0.3-0.5
SEMI
n-type Si:P
[100]
4″
300
P/E
0.29-0.31
SEMI Prime
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Not sealed both sides scratched
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Both sides with scratches
n-type Si:P
[100]
4″
200
P/E
0.10-0.15
SEMI Prime, Front-side Prime, Back-side Test grade polish
n-type Si:Sb
[100]
4″
525
P/E
0.020-0.022
Prime
n-type Si:Sb
[100-6° towards[110]] ±0.5°
4″
525
P/E
0.015-0.020
SEMI Prime
n-type Si:Sb
[100]
4″
525
P/E
0.011-0.014
Prime
n-type Si:Sb
[100]
4″
305 ±3
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime, TTV<5μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime
n-type Si:As
[100]
4″
525
P/E
0.0025-0.0035
SEMI Prime
n-type [...]
2019-03-05meta-author
Carrier mobility is often used to refer to the overall movement of electrons and holes in semiconductors. Mobility refers to the average drift velocity of carriers (electrons and holes) under the action of a unit electric field. That is a measure of the speed [...]
2022-06-06meta-author
PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm.
Specifications:
Crystal: 0.8 nm MoS2 EPI film on SiO2/Si
Si(100) 10×10 x0.5 mm,1sp
MoS Film: 0.8nm
SiO2=300nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-28meta-author
Calcite for sale is a negative uniaxial crystal that has high birefringence, wide spectral transmission and availability in reasonably sized rhombs. It’s good material used as visible and near IR polarizers and retardation plate. CaCO3 is the chemical formula for the mineral. PAM XIAMEN [...]
2019-04-17meta-author