PAM XIAMEN offers 905nm laser diode wafers.
1. Specs of 905nm Laser Diode Wafer
1.1 Three Stark 905nm Pulse LD Structures PAM211202-GAINAS
Layer
Composition
Thickness
Concentration
13
P+ GaAs
/
/
12
P-AlGaAs cladding + waveguide
d~1.6um
/
11
Undoped GaInAs QW PL:880~900nm
/
/
10
N- AlGaAs cladding + waveguide
/
9
N++ GaAs/P++ GaAs Tunnel junction
/
/
8
P- AlGaAs cladding + waveguide
/
7
Undoped GaInAs QW PL:880~900nm
/
/
6
N- AlGaAs cladding [...]
2019-03-13meta-author
PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips:
1. Specifications of SiC Chip Substrate
No 1. PAM200508-SIC-AU
10×10mm SiC substrate / Ti(0.1um)-Ni(0.1um)-Au(2um), n type.
Grade: dummy
Thickness: approx. 350um
Backside surface: with metal films of Ti-Ni-Au
Metal thickness: Ti(0.1um)-Ni(0.1um)-Au(2um),
No 2. SiC Wafer with [...]
2020-07-17meta-author
PAM XIAMEN offers 4″FZ Silicon Ignot.
Silicon ingot, per SEMI, 100.7±0.3mmØ,
FZ n-type Si:P[111]±2.0°, Ro=(2,000-4,000)Ohmcm,
NO Flats.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
MCC Lifetime>1,000µs
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-07-05meta-author
A process model of wafer thinning by diamond grinding
This paper is to develop and investigate a wafer thinning process model (WTPM) to integrate the wafer thickness into set-up parameters and predict total thickness variation (TTV) of ground wafers with modification of the wafer grinding [...]
PAM XIAMEN offers Titanium Oxide TiO2 Crystal Substrates.
Main Parameters
Crystal structure
Tetragonal, Rutile
Unit cell constant
a=4.5936Å c=2.9582 Å
Density
4.26 (g/cm3)
Melting point
1870 ℃
Dielectric constants
dη/dT: a: -0.72×10^-6/k, c: -0.42×10^-6/k
Linear expansion coefficient
7.14 x 10-6 /℃ along a axis
9.19 x 10-6 /℃ along c axis
Hardness
7 (mohs)
Polishing
Single or double side polished
Size
5×5×10mm, 5×10×10mm, 10×10×0.5mm, other [...]
2019-03-15meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2121
p-type Si:B
[110]
2″
380
P/P
FZ 130–160
1 F @ <111> only
PAM2122
p-type Si:B
[110]
2″
280
P/E
FZ 120–300
1 F @ <111> only
PAM2123
p-type Si:B
[100]
2″
300
P/P
FZ 400–1,000
Prime, NO Flats, hard cst
PAM2124
p-type Si:B
[100]
2″
300
P/E
FZ >50
SEMI Prime, 2Flats, hard cst
PAM2125
p-type Si:B
[111]
2″
300
P/E
FZ 730–1,050
SEMI Prime, [...]
2019-02-18meta-author