PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1000
P/E
>5
SEMI Prime, in hard cassettes of 6, 6 & 7 wafers
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1300
P/E
>5
SEMI Prime, hard cst
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
E/E
>5
SEMI, LaserMark, in opened hard cast
n-type Si:P
[111-2.5°] ±0.5°
3″
380
P/E
1-3
SEMI Prime
n-type Si:P
[111] ±0.5°
3″
380
P/E
1-10
SEMI Primet
n-type Si:P
[111-3.0°] ±1°
3″
381
P/E
1-20 {1.7-5.7}
SEMI Test
n-type Si:P
[111] ±0.5°
3″
570
P/P
1-10
SEMI Primet
n-type Si:Sb
[111] ±0.5°
3″
380
P/E
0.019-0.026
SEMI Prime, in Empak cassettes [...]
2019-03-06meta-author
Silicon Carbide Circuits on the Way
Although silicon is the semiconducting material of choice in the majority of applications in electronics, its performance is poor where large currents at high voltages have to be controlled. For about 50 years, scientists have been eyeing silicon carbide [...]
PAM XIAMEN offers GaN on Sapphire for Power.
1.1 GaN HEMT Structure on Sapphire for Power Application
Wafer size
2”, 3”, 4”, 6”
AlGaN/GaN HEMT structure
Refer 1.2
Carrier density
6E12~2E13 cm2
Hall mobility
/
XRD(102)FWHM
~arc.sec
XRD(002)FWHM
~arc.sec
Sheet Resistivity
/
AFM RMS (nm）of 5x5um2
<0.25nm
Bow(um)
<=35um
Edge exclusion
<2mm
SiN passivation layer
0~30nm
Al composition
20-30%
In composition
17% for InAlN
GaN cap
/
AlGaN/(In)AlN barrier
/
AlN interlayer
/
GaN channel
/
C [...]
2019-05-17meta-author
PAM XIAMEN offers Ultra-Thinned Silicon Wafers! We have them!
Free Standing Thin Silicon Wafers
We offer freestanding super thin silicon wafers with thicknesses ranging from 5µm to 100µm and with diameters from 5mm to 6. The thin Silicon wafers are true mirror finish DSP, good surface flatness, haze-free, [...]
2019-02-26meta-author
SPC Counting Module
Both PAM1002 and PAM0502 are single channel counting module based on CZT detector.They integrated CZT detectors,which sizes are 10x10x2mm³, 5x5x2mm³ or others, high gain charge sensitive amplifier and SK shaping circuit.
Specification
Dimension
37×18×5mm3
Weight
5.7g
Energy range
50KeV~1.5MeV
Measurement accuracy
<±10%@137Cs
Dose rate range
0.1uSv/h~1.5mSv/h
Output impedance
500Ω
Operating temperature
-20℃-+40℃
Power
<0.01W
Time to peak
440ns
Falling edge [...]
2019-04-23meta-author
PAM XIAMEN offers Au (epi) /Cr coated SiO2/Si substrate.
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm
Au( highly oriented [...]
2019-04-26meta-author
