PAM XIAMEN offers InP Indium Phosphide Crystal Substrates.
Choose high-quality InP (Indium Phosphide) crystal substrates for sale at PAM XIAMEN Supplies. Our InP substrates come in many sizes and conductivity types.
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2019-03-12meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
40mm
250
P/E
1-100
SEMI Prime, Soft cst
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
525
P/P
1-30
SEMI,
p-type Si:B
[100]
2″
1000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
1-10
SEMI Prime
p-type Si:B
[100]
2″
275
P/E
0.5-1.0
SEMI
p-type Si:B
[100]
2″
3150
C/C
>0.5
1Flat
p-type Si:B
[100]
2″
280
P/P
0.4-0.6
SEMI Prime,
p-type Si:B
[100]
2″
275
P/E
0.2-0.4
SEMI Prime,
p-type Si:B
[100]
2″
279
P/P
0.08-0.12
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
0.015-0.020
Groups of [...]
2019-03-07meta-author
A 3-inch GaAs epitaxial wafer can be provided for making a PIN diode chip, which can make a power electronic device with high isolation and low insertion loss. A heterojunction AlGaAs/GaAs PIN wafer makes the diode with low RF on-state resistance suitable for fabricating various [...]
2021-11-02meta-author
PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name [...]
2019-03-12meta-author
Physicists reveal material for high-speed quantum internet
Electrical excitation causes a point defect in the crystal lattice of silicon carbide to emit single photons, which are of use to quantum cryptography. Credit: Elena Khavina, MIPT
Researchers from the Moscow Institute of Physics and Technology have rediscovered [...]
2018-07-25meta-author
The wide band gap semiconductor materials represented by GaN and SiC have the advantages of fast electron saturation drift and strong radiation resistance, and have a wide range of applications in solid-state lighting, electronic power and mobile communications. Among them, solid-state lighting is of [...]
2022-07-13meta-author