PAM XIAMEN offers 6″FZ Prime Silicon Wafer-2
6″ Si wafer, Diameter 150mm, FZ Gas Dope, DSP, N(111), resistivity 5000-10,000Ωcm
PARAMETER | SPECIFICATION | |
GENERAL CHARACTERISTICS | ||
1 | Growth Method | FZ Gas Dope |
2 | Crystal Orientation | (111) |
3 | Conductivity Type | n |
4 | Dopant | Phosphorus. |
5 | Nominal Edge Exclusion | 6 mm |
ELECTRICAL CHARACTERISTICS | ||
6 | Resistivity | 5000 – 10,000 Wcm |
7 | Life Time | >1500 µsec |
CHEMICAL CHARACTERISTICS | ||
8 | Oxygen Concentrations | < 2xE16 at/cm3 |
9 | Carbon Concentrations | < 2xE16 at/cm3 |
WAFER PREPARATION CHARACTERISTICS | ||
10 | Front Surface Condition | Polished, DSP |
11 | Edge Surface Condition | Not specified |
DIMENSIONAL CHARACTERISTICS | ||
12 | Diameter | 150 ± 0.2 mm |
13 | Primary Flat Length | 57.5±2.5 mm |
14 | Primary Flat Orientation | {110} ± 1° |
15 | Secondary Flat Length | None |
16 | Edge Profile | According to SEMI M1 Standard |
17 | Thickness, Center Point | 320±15 µm |
18 | Total Thickness Variation, Max | 10µm |
19 | Bow, Max | 40µm |
20 | Warp, Max | 40µm |
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com