With different fabrication process from the traditional ones, SiC power device cannot be directly made on single crystal SiC materials. It’s obligatory to grow high-quality epitaxial materials on the conductive single crystal substrate to produce different devices on the epitaxial layers.
SiC usually adopts the PVT method with [...]
2021-02-25meta-author
Thinking thin brings new layering and thermal abilities to the semiconductor industry
This image shows a thick bulk gallium nitride (GaN) crystal wafer (2 inches in diameter) with a GaN film in the foreground fabricated by controlled spalling (its film thickness is ~20 microns or [...]
2017-07-26meta-author
The development of SiC and GaN power semiconductor market
The current state of SiC technology and market, and the development trend in the next few years.
The SiC device market is promising. Sales of Schottky barrier diodes have matured and MOSFET shipments are expected to increase [...]
2018-11-14meta-author
PAM XIAMEN offers Glass Substrates(ITO Coated Glass / Plastic Substrates and ITO/ZnO coated Sodalime Glass).
ITO Coated Glass / Plastic Substrates
ITO coated(sodalime) glass has highly electrical conductivity yet with excellent transparence. It has been widely used in flat panel display and solar cells.
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2019-04-18meta-author
GaN-based light-emitting diode (LED) solid-state lighting has become the most important lighting technology in recent years because it has many advantages such as high conversion efficiency, long life, and eco-friendliness. Due to the lack of natural GaN substrates, GaN-based LED structures are usually fabricated [...]
2021-12-22meta-author
What is GaAs?
GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs).
GaAs Basic Parameters at 300K
Crystal structure
Zinc Blende
Group of [...]
2012-05-14meta-author