PAM XIAMEN offers InSb Wafer.
InSb Ge-doped
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished-1
InSb (100) 2″ dia x 0.45 mm, P type, Ge doped , 1 [...]
2019-05-07meta-author
Top 10 Publication in in Microelectronics & Electronic Packaging by Citation
Post: PAM-XIAMEN, date: Jan 13,2020
PAM-XIAMEN has compiled top 10 the ranking data and the publication name in Microelectronics & Electronic Packaging by citation in impact factor(h5-index and h5 median, according to google scholar)
PAM-XIAMEN is [...]
2020-01-13meta-author
PAM-XIAMEN have round, saw cut, lap and polish gallium antimonide wafers with an epi-ready surface quality for sale. Gallium antimonide crystal is a compound formed by 6N pure Ga and Sb element and is grown by Liquid Encapsulated Czochralski ( LEC ) method with [...]
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:Sb
[111-2.5°]
3″
300
P/E
0.014-0.018
SEMI Prime
n-type Si:Sb
[111-3.5°]
3″
380
P/E
0.014-0.016
SEMI Prime
n-type Si:Sb
[111-3°]
3″
300
P/E
0.011-0.016
SEMI Prime
n-type Si:Sb
[111] ±0.5°
3″
300
P/P
0.01-0.20
SEMI Prime
n-type Si:Sb
[111]
3″
380
P/E
0.008-0.025
SEMI Prime
n-type Si:As
[111-0.5°]
3″
380
P/P
0.003-0.005
SEMI Prime
n-type Si:As
[111]
3″
380
P/E/P
0.002-0.005
SEMI Prime
n-type Si:As
[111-2.5°]
3″
380
P/E
0.002-0.005
SEMI Prime
n-type Si:As
[111-4°]
3″
380
P/E
0.002-0.005
SEMI Prime
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material [...]
2019-03-06meta-author
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
TECHNOLOGIES
The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology.
The MESFET (fig. [...]
PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:
1. Specifications of 785nm GaAs LD Epi Wafer
No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD
Layer
Material
Thickness
Notes
Layer 7
AlAs
–
Layer 6
GaAs
–
Layer 5
AlAs
–
Layer 4
AlGaAs
150 nm
Emitting at 785nm
Layer 3
AlAs
–
Layer 2
AlGaAs
–
Emitting at 700 nm
Layer [...]
2019-03-13meta-author