What is the Growth Facet?
In the central region of SiC {0001} wafer, the doping concentration is usually relatively high, such as the dark color observed in the central region, which is due to the enhanced impurity doping in facet growth, as shown in Fig. [...]
2021-01-22meta-author
The commonly used 4H-SiC and 6H-SiC space groups are both P63mc, and the point group is 6mm. 6mm belongs to one of 10 polar point groups (1, 2, 3, 4, 6; m, 3m; mm2, 4mm, 6mm), so 4H-SiC and 6H-SiC are polar crystals. The [...]
2021-04-09meta-author
PAM XIAMEN offers MgF2 crystal.
MgF2 is an excellent Infrared crystal Crystals. PAM XIAMEN supplies BaF2 crystal substrate, window and blank up to 3″ diameter for all IR applications
Xtl Structure
Lattice (A)
Melting Point
Density g/cm3
Hardness
Thermal Expansion
Refractive index
Tetragonal
a = 4.64
1255 oC
3.18
6 (mohs)
13.7×10-6 / oC, // c8.48×10-6/ oC, perpen. c
ho 1.37740
c = 3.06
he 1.38945
MgF2 [...]
2019-05-10meta-author
PAM XIAMEN offers 3″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
28.5
n- Si:P
20±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
30
n- Si:P
4.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
9.5±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
12±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
34
n- Si:P
11±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
36
n- Si:P
4±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
41
n- Si:P
25±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42
n- Si:P
20.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
42.5
n- Si:P
17±10%
n/n+
3″Øx355μm
n- Si:As[111]
0.001-0.005
P/E
52.5
n- Si:P
12.5±10%
n/n+
3″Øx381μm
n- Si:As[111]
0.001-0.005
P/E
56
n- Si:P
12±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
70
n- Si:P
73±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
72
n- Si:P
12.5±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
73
n- Si:P
84±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
13±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
11±10%
n/n+
3″Øx508μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
12±10%
n/n+
3″Øx375μm
n- Si:As[111]
0.001-0.005
P/E
85
n- [...]
2019-03-08meta-author
PAM XIAMEN offers ZnO/Pt/Ti coated Si wafer.
ZnO/Pt/Ti coated Si wafer ,4″x0.525mm,1sp P-type B-doped,( ZnO=150nm ,Pt=150nm Ti=20-40nm)
Silicon Wafer Specifications:
Film: ZnO/Pt/Ti thin film on Si (100) (P-type) substrate ,4″x0.525mm,1sp
ZnO=150nm, ZnO film: c-axis, medium (001) orientation
Pt/Ti film: [...]
2019-04-29meta-author
Sony and Apple’s Micro-LED Display Market Strategy
Sony and Apple are the key to promoting micro-LED displays on the market, but the two have diverged in display developments. The Japanese company is making large micro-LED displays, and Apple small displays, but why have both chosen micro-LEDs? [...]
2016-08-22meta-author