PAM XIAMEN offers Annealed Silicon Wafer.
Silicon Wafer Annealing uses a high-temperature furnace to relieves stress in silicon.
The heat activates ion-implanted dopants, reduces structural defects and stress,
and reduces interface charge at the silicon-silicon dioxide interface.
Silicon wafer annealing is used for the following purposes:
Relieve stress in silicon wafers
Activate or move dopants
Densify deposited or grown films
Repair implant damage in wafer processing
Change film to film or film to substrate interfaces for wafers with multiple films
Silicon on Insulator
Let us know how we can help you with your silicon wafer annealing needs.
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.