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Home > News > Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields
Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields

 

We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO(2) nanospheres, followed by inductively-coupled plasma etch to create nanorod-shapes with MQWs, which were transferred to the pre-patterned SiO(2)/Si wafer. This method allowed us to obtain nanorod LEDs with uniform length, diameter and qualities. Dielectrophoretic force created by non-uniform electric field was very effective at positioning the processed nanorods on the pre-patterned contacts. After aligned by non-uniform electric field, we observed bright EL from many nanorods, which had both cases (p-GaN/MQWs/n-GaN or n-GaN/MQWs/p-GaN). Therefore, bright ELs at different locations were observed under the various bias conditions.

Source:Korea University

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