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3″ Silicon EPI Wafer-3
PAM XIAMEN offers 3″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 90 n- Si:P 41±10% n/n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 18 n- Si:P 5±10% n/n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 96 n- Si:P 30±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 21±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 16 ±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 12±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 100 n- Si:P 20±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 135 n- Si:P 35±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 140 n- Si:P 31±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 38±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 145 n- Si:P 25±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 150 n- Si:P 44±10% n/n+ 3″Øx508μm n- Si:As[111] 0.001-0.005 P/E 158 n- Si:P 67±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 8 n- Si:P 0.63±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 0.07±10% n/n+ 3″Øx381μm n- Si:Sb[111] 0.005-0.020 P/E 30 n- Si:P 6.75±10% n/n+ 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 75 n- Si:P 40±10% n/n/n+ 3″Øx330μm n- Si:Sb[111] 0.005-0.018 P/E 25 n- Si:P 2.5±10% n/n/n+ For [...]
5″ Silicon Wafer
PAM XIAMEN offers 5″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 5″ 635 ±15 E/E FZ >5,000 p-type Si:B [100] 5″ 889 ±13 P/E FZ >1,000 Prime p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 p-type Si:B [100] 5″ 920 ±10 E/E FZ >1,000 Warp measured <8μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 400 P/E FZ 7,000-14,300 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm n-type Si:P [100] 5″ 350 P/E FZ 5,000-10,000 SEMI Prime, Bow/Warp<20μm, in Empak cassettes of 5 wafers n-type Si:P [111] ±0.1° 5″ 200 ±15 BROKEN FZ >3,000 Broken L/L wafers, in 2 pieces n-type Si:P [111] 5″ 300 ±15 P/E FZ 1,000-3,000 SEMI Prime, in [...]
(100) Oriented Silicon Wafers-3
PAM XIAMEN offers (100) orientation Silicon Substrates. Below is just a small selection. Let us know if you can use or if we can quote you on another spec. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2885 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM [...]
P-type Silicon Carbide Substrate and IGBT Devices
Due to the high growth pressure and relatively low temperature, Al is not easily evaporated and lost in the liquid-phase method. Adding Al to the flux used in the liquid-phase method can easily obtain P-type silicon carbide (SiC) crystals with high carrier concentration, solving the [...]
CZT High Resolution Pixel Detector
PAM-PA01 series are pixel electrode structured detectors based on CZT crystal. They can detect X-ray, γ-ray and imaging. They have a high energy and space resolution. 1. Specification of CZT High Resolution Pixel Detector Material CdZnTe Density 5.8g/cm3 Volume resistance >1010Ω.cm Dimensions 10.0×10.0mm2 Thickness 2.0mm 5.0mm Pixel size 1.1×1.1mm2 Pixel array 8×8 Electrode material Au Operation temperature -20℃-+40℃ Energy range 20KeV~700MeV 20KeV~700MeV Energy resolution(22℃) <6%@59.5KeV <4.5%@122KeV <3%@662KeV Defective pixel(DP) 10℃~40℃ Storage temperture 20%-80% Remarks Customized available 2. Spectrum of [...]
Photoluminescence and Raman studies of GaN films grown by MOCVD
Photoluminescence and Raman studies of GaN films grown by MOCVD The photoluminescence (PL) of high quality GaN epitaxial layer grown by MOCVD was investigated for various excitation power and temperatures from 8.3 to 300K. The PL at 8.3 K and with relatively low excitation power [...]