(100) Oriented Silicon Wafers-3

PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

Item Material Orient. Diam
(mm)
Thck
(μm)
Surf. Resistivity
Ωcm
Comment
PAM2885 p-type Si:B [100] 4″ 500 P/P 1–50 SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188.
PAM2886 p-type Si:B [100] 4″ 525 P/P 1–5 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2887 p-type Si:B [100] 4″ 525 P/P 1–10 ohm-cm SEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers
PAM2888 p-type Si:B [100] 4″ 525 P/P 1–10 ohm-cm SEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee
PAM2889 p-type Si:B [100] 4″ 525 P/P 1–5 SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches
PAM2890 p-type Si:B [100-4° towards[110]] ±0.5° 4″ 525 P/E 1–20 SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2891 p-type Si:B [100] 4″ 525 P/E 1–5 SEMI Prime, 1Flat, Empak cst
PAM2892 p-type Si:B [100] 4″ 525 P/E 1–20 Spotted defect wafers with three layers of SiO2 and Ge via Electron Beam Evaporation, 2Flats, Empak cst
PAM2893 p-type Si:B [100] 4″ 525 NP/PN 1–10 ohm-cm SEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides
PAM2894 p-type Si:B [100] 4″ 525 NOxP/POxN 1–10 ohm-cm SEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst
PAM2895 p-type Si:B [100-0.5°] 4″ 590 ±10 E/E 1–3 SEMI Prime, 2Flats
PAM2896 p-type Si:B [100] 4″ 1200 P/P 1–15 SEMI Prime, 2Flats, Empak cst
PAM2897 p-type Si:B [100] 4″ 1200 P/P 1–15 Prime, 1Flat, Empak cst
PAM2898 p-type Si:B [100] 4″ 2100 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
PAM2899 p-type Si:B [100] 4″ 3000 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
PAM2900 p-type Si:B [100] 4″ 3000 P/E 1–30 SEMI, 2Flats, Individual cst
PAM2901 p-type Si:B [100] 4″ 3175 P/P 1–10 ohm-cm SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2902 p-type Si:B [100] 4″ 3175 P/P 1–10 ohm-cm SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2903 p-type Si:B [100] 4″ 3200 P/E 1-100 SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
PAM2904 p-type Si:B [100] 4″ 4000 P/P 1-100 SEMI Prime, 2Flats, Individual cst
PAM2905 p-type Si:B [100] 4″ 890 ±15 P/P 0.5-10.0 SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
PAM2906 p-type Si:B [100] 4″ 525 P/E 0.1-0.2 SEMI Prime, 2Flats, Empak cst
PAM2907 p-type Si:B [100] 4″ 350 P/E 0.095-0.130 SEMI Prime, 2Flats, Empak cst
PAM2908 p-type Si:B [100-6° towards[110]] ±0.5° 4″ 525 P/E 0.015-0.020 SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers
PAM2909 p-type Si:B [100] 4″ 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
PAM2910 p-type Si:B [100] 4″ 300 E/E 0.01-0.02 SEMI Prime, 2Flats, Empak cst, TTV<4μm
PAM2911 p-type Si:B [100-4°] ±0.5° 4″ 380 ±10 P/P 0.01-0.02 SEMI Prime, Empak cst, TTV<2μm
PAM2912 p-type Si:B [100] 4″ 525 P/E 0.01-0.02 SEMI, 2Flats, Empak cst
PAM2913 p-type Si:B [100] 4″ 525 P/POx 0.008-0.020 SEMI Prime, 2Flats, Empak cst
PAM2914 p-type Si:B [100] 4″ 300 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst
PAM2915 p-type Si:B [100] 4″ 500 P/P 0.001-0.005 SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
PAM2916 p-type Si:B [100] 4″ 525 P/P 0.001-0.005 SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm
PAM2917 p-type Si:B [100] 4″ 525 P/E 0.001-0.005 SEMI Prime, 2Flats, Empak cst
PAM2918 p-type Si:B [100] 4″ 525 BROKEN 0.001-0.005 Broken wafer (shattered into many pieces), 1Flat
PAM2919 p-type Si:B [100] 4″ 800 C/C 0.001-0.005 SEMI, 2Flats, Empak cst, With striation marks
PAM2920 p-type Si:B [100] 4″ 2000 P/P 0.001-0.005 SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers
PAM2921 p-type Si:B [100] 4″ ? P/P ? SEMI Test, 2Flats, Empak cst
PAM2922 p-type Si:B [100] 4″ 375 P/E <0.0015 {0.00091-0.00099} SEMI Prime, 1Flat, Empak cst, TTV<3μm
PAM2923 n-type Si:P [100] 4″ 310 ±10 P/P 20-30 SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee
PAM2924 n-type Si:P [100] 4″ 350 P/P 20-23 SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst
PAM2925 n-type Si:P [100] 4″ 525 P/E 10–30 SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers
PAM2926 n-type Si:P [100] 4″ 5800 P/E 10-100 SEMI Prime, 2Flats, Individual cst
PAM2927 n-type Si:P [100] 4″ 5800 P/E 10-100 SEMI Prime, 2Flats, Individual cst
PAM2928 n-type Si:P [100-4° towards[111]] 4″ 525 P/E 43719 SEMI Prime, 2Flats, Empak cst

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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