(100) Oriented Silicon Wafers-3

(100) Oriented Silicon Wafers-3

PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.

ItemMaterialOrient.Diam
(mm)
Thck
(μm)
Surf.Resistivity
Ωcm
Comment
PAM2885p-type Si:B[100]4″500P/P1–50SEMI Prime, 2Flats, in Empak cst, Carbon content (9.8-14.1)E16/cc per ASTM F1319, Oxygen content 6.8E17/cc per ASTM F1188.
PAM2886p-type Si:B[100]4″525P/P1–5SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2887p-type Si:B[100]4″525P/P1–10 ohm-cmSEMI Test, 2Flats, Empak cst, Unsealed, dirt and defects on wafers
PAM2888p-type Si:B[100]4″525P/P1–10 ohm-cmSEMI Test, 2Flats, Empak cst, Dirty wafers, can be recleaned for extra fee
PAM2889p-type Si:B[100]4″525P/P1–5SEMI Test, 2Flats, Empak cst, Wafers with particles and scratches
PAM2890p-type Si:B[100-4° towards[110]] ±0.5°4″525P/E1–20SEMI Prime, 2Flats, Empak cst, TTV<5μm
PAM2891p-type Si:B[100]4″525P/E1–5SEMI Prime, 1Flat, Empak cst
PAM2892p-type Si:B[100]4″525P/E1–20Spotted defect wafers with three layers of SiO2 and Ge via Electron Beam Evaporation, 2Flats, Empak cst
PAM2893p-type Si:B[100]4″525NP/PN1–10 ohm-cmSEMI Prime, 2Flats, Empak cst, with 150nm of LPCVD Stoichiometric Silicon Nitride on bith sides
PAM2894p-type Si:B[100]4″525NOxP/POxN1–10 ohm-cmSEMI Prime, 2Flats, Both sides with 150nm of LPCVD Si3N4 over 200nm of SiO2 over Si , Empak cst
PAM2895p-type Si:B[100-0.5°]4″590 ±10E/E1–3SEMI Prime, 2Flats
PAM2896p-type Si:B[100]4″1200P/P1–15SEMI Prime, 2Flats, Empak cst
PAM2897p-type Si:B[100]4″1200P/P1–15Prime, 1Flat, Empak cst
PAM2898p-type Si:B[100]4″2100P/E1-100SEMI Prime, 1Flat, Individual cst, Groups of 5 wafers
PAM2899p-type Si:B[100]4″3000P/E1-100SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
PAM2900p-type Si:B[100]4″3000P/E1–30SEMI, 2Flats, Individual cst
PAM2901p-type Si:B[100]4″3175P/P1–10 ohm-cmSEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2902p-type Si:B[100]4″3175P/P1–10 ohm-cmSEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2903p-type Si:B[100]4″3200P/E1-100SEMI Prime, 1Flat, Individual cst, Sealed as group of 9 wafers
PAM2904p-type Si:B[100]4″4000P/P1-100SEMI Prime, 2Flats, Individual cst
PAM2905p-type Si:B[100]4″890 ±15P/P0.5-10.0SEMI TEST (Scratches), 1Flat, TTV<8μm, Empak cst
PAM2906p-type Si:B[100]4″525P/E0.1-0.2SEMI Prime, 2Flats, Empak cst
PAM2907p-type Si:B[100]4″350P/E0.095-0.130SEMI Prime, 2Flats, Empak cst
PAM2908p-type Si:B[100-6° towards[110]] ±0.5°4″525P/E0.015-0.020SEMI Prime, 2Flats, in Empak cassettes of 5 & 10 wafers
PAM2909p-type Si:B[100]4″300E/E0.01-0.02SEMI Prime, 2Flats, Empak cst, TTV<4μm
PAM2910p-type Si:B[100]4″300E/E0.01-0.02SEMI Prime, 2Flats, Empak cst, TTV<4μm
PAM2911p-type Si:B[100-4°] ±0.5°4″380 ±10P/P0.01-0.02SEMI Prime, Empak cst, TTV<2μm
PAM2912p-type Si:B[100]4″525P/E0.01-0.02SEMI, 2Flats, Empak cst
PAM2913p-type Si:B[100]4″525P/POx0.008-0.020SEMI Prime, 2Flats, Empak cst
PAM2914p-type Si:B[100]4″300P/P0.001-0.005SEMI Prime, 2Flats, Empak cst
PAM2915p-type Si:B[100]4″500P/P0.001-0.005SEMI Prime, 2Flats, Empak cst, Wafers with striation marks
PAM2916p-type Si:B[100]4″525P/P0.001-0.005SEMI Prime, 1Flat, Empak cst, TTV<5μm, Bow<15μm, Warp<30μm
PAM2917p-type Si:B[100]4″525P/E0.001-0.005SEMI Prime, 2Flats, Empak cst
PAM2918p-type Si:B[100]4″525BROKEN0.001-0.005Broken wafer (shattered into many pieces), 1Flat
PAM2919p-type Si:B[100]4″800C/C0.001-0.005SEMI, 2Flats, Empak cst, With striation marks
PAM2920p-type Si:B[100]4″2000P/P0.001-0.005SEMI Prime, 2Flats, Individual cst Sealed in group of 5 wafers
PAM2921p-type Si:B[100]4″?P/P?SEMI Test, 2Flats, Empak cst
PAM2922p-type Si:B[100]4″375P/E<0.0015 {0.00091-0.00099}SEMI Prime, 1Flat, Empak cst, TTV<3μm
PAM2923n-type Si:P[100]4″310 ±10P/P20-30SEMI Test, 2Flats, Empak cst, Unsealed, Polished but dirty. Can be made prime for additional fee
PAM2924n-type Si:P[100]4″350P/P20-23SEMI Prime, 14 wafes with 2 flats, 7 with 1 flat, Empak cst
PAM2925n-type Si:P[100]4″525P/E10–30SEMI, 2Flats, in Empak cassettes of 7 & 7 wafers
PAM2926n-type Si:P[100]4″5800P/E10-100SEMI Prime, 2Flats, Individual cst
PAM2927n-type Si:P[100]4″5800P/E10-100SEMI Prime, 2Flats, Individual cst
PAM2928n-type Si:P[100-4° towards[111]]4″525P/E43719SEMI Prime, 2Flats, Empak cst

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

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