3″ FZ Prime Silicon Wafer Thickness: 350±15um

PAM XIAMEN offers 3″FZ Prime Silicon Wafer Thickness: 350±15um.

3″ Si epi-ready wafer
Si wafer
Diameter: 76mm
Thickness: 350±15um
Dopant: P
Orientation: (100)
Resistivity: 500-1000 Ohm*cm
Double side polished, epi-ready
laser mark with numbering from N1k- 001 to NN1k- 200 for alll 200pcs

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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