4″ FZ Prime Silicon Wafer-6

4″ FZ Prime Silicon Wafer-6

PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6

Substrate Monocrystalline Silicon
Diameter 100 ±0.3mm
Growth method Fz
Thickness 600± 25µm
Type/Dopant N/Phosphorus
Resistivity>5,000 Ωcm
Primary Flat [email protected][111]±<0.25°
Primary Flat Length 32.5± 2.5mm
Secondary Flat [email protected][111]70.5° CW from primary flat
Front side finish Mirror Polish
Edge rounded per SEMI standard
*Exception: No edge round on primary flat*
Back side finish Mirror Polish
Packaging Empak cassette
Option Laser Serialized: Shallow laser

No edge round only on primary flat, and edge round for other part of circumference.

We require no edge round on flat b/c we align our MEMS structures to the (111) primary flat and the straight edge is easier to see in our mask aligner.

For more information, please contact us email at [email protected] and [email protected].

Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be, to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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