4″CZ Prime Silicon Wafer-2

4″CZ Prime Silicon Wafer-2

PAM XIAMEN offers 4″CZ Prime Silicon Wafer.

4″ Si substrate wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um
Back side etched

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-07-05

Share this post

Related Posts

4″ Test Grade Silicon Wafer

PAM XIAMEN offers 4″ Test Grade Silicon Wafer. Can you quote the same silicon wafer but 100 wafer instead of 50 Need to be packed in 25 wafer pack with cleanroom paper separators • 50 silicon wafers (reclaim or test) to serve as polish [...]

2019-06-28meta-author
PbSe single crystal substrate – Can’t Offer Temporarily

PAM XIAMEN offers PbSe single crystal substrate. Lead selenide (PbSe), or lead(II) selenide, a selenide of lead, is a semiconductor material. It forms cubic crystals of the NaCl structure; it has a direct bandgap of 0.27 eV at room temperature. (Note that incorrectly identifies [...]

2019-05-14meta-author
Diamond Wafers

Diamond wafers from PAM-XIAMEN are wafer-scale products that are used to tap the huge potential of diamond materials, such as tribological testing, unique nano-scale processing applications and MEMS development. In the current diamond wafer market, there are three grade diamond wafer, Microelectronics Grade diamond wafer, Thermal [...]

2018-07-10meta-author
(20-21) Plane U-GaN Freestanding GaN Substrate

PAM-XIAMEN offers (20-21) Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN(20-21)-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room   For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-20meta-author
Gas filled prototype of a CdZnTe pixel detector

Gas filled prototype of a CdZnTe pixel detector   CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5–100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. [...]

2013-10-09meta-author
2″ Silicon Wafer-7

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 280 P/P 1-5 SEMI Prime, Si:P [100-6°] 2″ 300 P/E 1-5 SEMI Prime, n-type Si:P [100] 2″ 350 P/P 1-50 Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats n-type Si:P [100] ±1° 2″ 400 ±15 P/P 1-10 SEMI Prime, TTV<3μm, Empak cst n-type Si:P [100] 2″ 3175 P/E 1-3 Prime, NO Flats, Individual cst n-type Si:P [100] ±1.0° 2″ 6000 P/E 1-10 SEMI Prime, , Individual cst n-type Si:P [100] 2″ 300 P/P 0.8-1.0 SEMI Prime, n-type Si:Sb [100] 2″ 300 P/E 0.01-0.02 SEMI Prime, n-type Si:Sb [100] 2″ 500 P/P 0.01-0.02 SEMI Prime, , in [...]

2019-03-07meta-author