Si wafers
Orientation (100)
Dia 6” x thickness 500µm
Type n or p
1-20 ohm.cm
One side polished
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 P Boron CZ -100 1-20 43768 P/P PRIME 100 P Boron CZ -100 1-20 40-60 P/P PRIME 100 P Boron CZ -100 1-20 80-100 P/P PRIME 100 P Boron CZ -100 1-20 180-200 P/P PRIME 100 P Boron CZ -100 1-20 300-350 P/E PRIME 100 P Boron CZ -100 1-20 300-350 P/P PRIME 100 P Boron CZ -100 1-20 350-400 P/P PRIME 100 P Boron CZ -100 1-20 375-425 P/E PRIME 100 P Boron CZ -100 .001-.005 450-500 P/P PRIME 100 P Boron CZ -100 .005-.02 450-500 P/P PRIME 100 P Boron FZ -100 >3000 450-500 P/P PRIME 100 P Boron CZ -100 1-20 450-500 P/P PRIME 100 P Boron CZ -100 .001-.005 500-550 P/E PRIME 100 P Boron CZ -100 .005-.02 500-550 P/E PRIME 100 P Boron FZ -100 >3000 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E/DTOx PRIME 100 P Boron CZ -100 1-20 500-550 P/E/Ni PRIME 100 P Boron CZ -100 1-20 500-550 P/E/WTOx 100 P Boron CZ -100 1-20 950-1050 P/E PRIME 100 P Boron CZ -100 1-20 950-1050 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
PAM XIAMEN offers 60+1mm FZ Si Ingot -2 FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM-XIAMEN Offers GaAs LED epitaxy wafer, which is AlGaInP LED (Red LED) stack on GaAs substrate. Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaAs epi wafer and other related products and services announced the new availability of size 2”&4” is on mass production in 2010. This new product [...]
How Does Semiconductor Wafer Technology? Edit by PAM-XIAMEN The development of silicon wafer can be attributed to the development of Moore’s law. Because the silicon wafer for semiconductor is round, so the semiconductor silicon wafer is also called “silicon wafer” or “wafer”. Wafer is the “substrate” [...]
PAM XIAMEN offers Nickel Single crystal. tomic number: 28 Atomic number: 28 Atomic mass: 58.71 g.mol -1 Atomic mass: 58.71 g.mol -1 Crystal structure: F.C.C Crystal structure: F.C.C Lattice Constant: 0.325 nm Lattice Constant: 0.325 nm Ni Single crystal Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished Ni Single Crystal Substrate, <100>, 10×10 x [...]
CVD diamond substrate film is available with a maximum working temperature at 600℃ from PAM-XIAMEN at below spec. Single crystal diamond material has the highest thermal conductivity among natural substances known at present. Diamond substrate has stable chemical properties, good electrical insulation and low dielectric constant. The [...]
