Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd

Powerway wafer develops and manufactures wafers with Gallium Arsenide (GaAs), Gallium Nitride (GaN) technologies advanced high-performance RF solutions for customers worldwide. We are a leading semiconductor wafer in market serving customers in mobile devices,3G and 4G base station,WLAN,WiMAX,GPS,defense and aerospace markets. We have GaAs foundry for wafer fabrication and support services. Our solutions, built with the in-house technology portfolio, enable quicker design turns, higher performance, and a smaller bill of materials. We have win awords of high performance solutions and have a worldwide network of design, sales and manufacturing wafers to serve our customers.

2012-06-20

Graded InGaN Enlightens Us On Molecular Interactions

A gradient is a material that has a specific molecule on its surface, with the concentration of the molecule sloping from a high concentration on one end to a low concentration at the other end. The gradient is used not only to determine whether [...]

2013-09-02meta-author InGaN substrate

Chrome Photomask

Chrome photomask is available for transferring high-precision circuit design. The photomask is the pattern film in the chip manufacturing process, and is one of the determined factors for chip accuracy and quality. More specifications please see as follows: No.1 5 inch Chrome Mask Plate (PAM180119-MASKW) Material Soda [...]

2021-11-05meta-author

FE SRTIO3 IRON DOPED STRONTIUM TITANATE CRYSTAL SUBSTRATES FE CONCENTRATION 0.05 WT%

PAM XIAMEN offers Fe SrTiO3 Iron Doped Strontium Titanate Crystal Substrates. Single crystal SrTiO3 doped with 0.05 wt% Fe Specifications: Crystal Structure:Cubic Growth Method:Vernuil Method Lattice Parameter:a=3.905Å Fe Doping Concentrations:0.05% Melting Point:2080C Density:5.122 g/ccm Hardness:6-6.5 Mohs Thermal expansion:10.3 x 10^-6/K Dielectric Constant:5.2 Dielectric Loss: ~5×10^-4（300K） ~3×10^-4（77K） Sizes Available:10×3m、10×5m、10×10mm、15×15mm、20×15mm can be customized upon request Typical thickness:0.5mm or 1.0mm Orientations:<100>、<110>、<111> Miscut:0.5 degree Surface Polishing:single or double [...]

2019-03-14meta-author

Ge epi-film on Si

PAM XIAMEN offers Ge epi-film on Si. 4” N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness 4” P-type Ge film on N-type Silicon Wafer, 0.5 um thickness For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] [...]

2019-04-28meta-author

Silver Conductive Film

PAM XIAMEN offers Silver Conductive Film. Planarized Silver Nanowire Film（230mm W x 1 M L x 125 microns, 12 ohm/sq ）on Heat Stabilized PET for thin film applications – Ag-PET-12K-1 Planarized silver nanowire film on heat stabilized PET for thin film applications Width 9in./230mm [...]

2019-04-26meta-author

6″ CZ Silicon Wafer

PAM XIAMEN offers 6″ CZ Silicon Wafer N Type/Arsenic doped Orientation (100) Thickness 625±15μm Resistivity 0.002-0.004Ωcm Flat one 47.5 ± 2.5, <110> ±1° TTV≤10μm TIR ≤5μm STIR≤2μm (15mm*15mm) Bow/Warp≤30μm Front Side: Chemical Mechanical Polished Back side: BSD Yes Poly(Å) No Oxide Back Seal(Å)5000±500 Å Edge Oxide Strip(mm):0.8 Back side Laser Mark: No Particle ≤10 @≥0.3㎛ METAL IMPURITIES: ≤ 2.5E10(Fe Cr Cu Ni)at/㎠ ≤ 5E10(Al Zn [...]

2021-03-18meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

[email protected] [email protected]

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd

Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd