PAM XIAMEN offers high-quality Au/Cr coated SiO2/Si substrate.
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate , 6″x0.675 mm,1sp P-type B-doped, Au(111)=150 nm, Cr=20nm
Au (highly oriented polycrystalline) /Cr coated SiO2/Si substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Cr=5 nm
Au( highly oriented polycrystalline)/Cr [...]
2019-04-16meta-author
PAM-XIAMEN can offer UV LED epi wafer, which is grown by our MOCVD range from 275nm to 405nm. Ultraviolet electromagnetic radiation, commonly known as UV, is used in many industries and applications. The emerging UV LED will be a competitive technology that can drive new innovative applications. UV-LED has [...]
2018-08-15meta-author
PAM XIAMEN supply InAs wafer up to 2″” diameter.
InAs <100> doped
InAs (100), P Type, Zn doped 10×10 x 0.5 mm, one side polished
InAs (100), P Type, Zn doped 5×5 x 0.5 mm, one side polished
InAs (100), S-doped 2″ dia x 0.5 [...]
2019-05-06meta-author
PAM-XIAMEN is available to offer P-type SiC substrates, please refer to: https://www.powerwaywafer.com/p-type-silicon-carbide-substrate-and-igbt-devices.html. The p-type substrate prepared by liquid-phase method can be applied to prepare IGBT devices and bipolar devices, solving the problem of missing p-type substrates in the SiC industry.
At present, significant breakthroughs have been made in [...]
2024-03-18meta-author
PAM XIAMEN offers Mica disk.
Pure Mica Sheet
Highest Grade Mica Disks, 9.9mm diameter 10/pkg
Highest Grade Mica Disks, 20mm diameter 10/pkg
Highest Grade Mica Sheets, 15mm x 15mm (0.59” x 0.59″”), 0.15 to 0.177mm (0.006-0.007″”) thick, 10/pkg”
Hi-Grade Mica Sheets, 15mm x 15mm [...]
2019-05-13meta-author
PAM-XIAMEN can offer 4 inch test grade silicon wafer with single side polished. The parameters for 4″-SSP Si wafer at test grade are as follows:
1. Parameters of Si Single Crystal Wafer at Test Grade
PAM-210310-Si wafer
Sl No
Item
Specifications
1
Growing Method
CZ
2
Wafer Diameter
100±0.5 mm
3
Wafer Thickness
525±25 μm
4
Wafer Surface Orientation
<100>±0.5º
5
Type
P type
6
Dopant
Boron
7
Dislocation Density
Less than 5000/cm2
8
Resistivity
2-8 [...]
2021-04-14meta-author