Highlights
•Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si – multi-junction solar cells.
•Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS.
•The projected widths of the interface layers [...]
PAM XIAMEN offers CZT and MCT crystal.
CZT and MCT crystal are new semiconductors which enables effective conversion of radiation to electron. The technology will reform radiography and radiation measurement in medical and industrial areas. We both provides the standard substrate , CZT and [...]
2019-04-19meta-author
PAM XIAMEN offers Undoped Silicon Wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Dia
Dopant
Ori
Res (Ohm-cm)
Thick (um)
Polish
Grade
Description
PAM3189
25.4mm
Undoped
<111>
>2000
280um
SSP
Test
Intrinsic FZ
PAM3190
25.4mm
Undoped
<100>
>5000
73.5um
DSP
Prime
FZ, Float Zone
PAM3191
50.8mm
Undoped
<100>
>10000
280um
DSP
Prime
FZ, Intrinsic item
PAM3192
50.8mm
Undoped
<100>
>10000
500um
SSP
Test
Float Zone, Undoped
PAM3193
76.2mm
Undoped
<100>
>5000 Ohm-cm
350um
DSP
MECH
NON-REFUNDABLE, POOR QUALITY. Sold “As-Is”; wafers are covered in streaks, residue, and particles.
PAM3194
100mm
Undoped
<100>
>20,000
500um
SSP
Prime
Intrinsic, Secondary flat SEMI, TTV<10 [...]
2019-02-14meta-author
Silicon carbide (SiC) wafer material supplied by PAM-XIAMEN, like SiC substrate (link: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html) is widely used in aerospace, radar communication, automotive industry and semiconductor industry due to its excellent properties such as high thermal conductivity, high strength, high temperature resistance and radiation resistance. However, [...]
2022-07-15meta-author
PAM XIAMEN offers 3″ Silicon Oxide Wafer
3″ Silicon Oxide Wafer
Diameter (mm): 76mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles [...]
2020-04-24meta-author
In the production process of single crystal silicon, impurities such as carbon and oxygen are inevitably introduced due to factors such as raw materials and methods, which directly affect the performance of single crystal silicon. For example, the annealed silicon wafer supplied by us, [...]
2022-06-29meta-author