


Bulk GaN Crystal Grown by HVPE We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 μm GaN layer grown by metal organic chemical vapor [...]
PAM XIAMEN offers LD Bare Bar for [email protected] 2mm. Brand: PAM-XIAMEN Wavelength: 808nm Filling Factor: 38% Output Power: 100W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]
How Does Semiconductor Wafer Technology? Edit by PAM-XIAMEN The development of silicon wafer can be attributed to the development of Moore’s law. Because the silicon wafer for semiconductor is round, so the semiconductor silicon wafer is also called “silicon wafer” or “wafer”. Wafer is the “substrate” [...]
PAM XIAMEN offers Single crystal SrLaGaO4. Single crystal SrLaGaO4, (100), 10×9.8×0.5mm 1sp Single crystal SrLaGaO4, (001), 10x3x0.5mm , one side polished Single crystal SrLaGaO4, (001), 10x5x0.5mm , one side polished Single crystal SrLaGaO4, (100), 10x10x0.5mm 2sp Single crystal SrLaGaO4, (100), 10x3x0.5mm , one side [...]
808nm laser diode wafer is offered by PAM-XIAMEN on N-type GaAs substrate. According to the material used in the active area, the LD wafer is mainly divided into two kinds with aluminum and without aluminum. More details please see below: 1. Laser Diode Wafer Specs No. 1 808nm Epi Wafer [...]
Silicon epitaxy with Boron dopant in size 200mm from PAM-XIAMEN is available for semiconductor device fabrication. Silicon epitaxy growth is a surface treatment process for silicon wafers, which means that a single crystal film is superimposed on the polished wafer by chemical reaction or other [...]