PAM XIAMEN offers 6″Prime Silicon Wafer Thickness 1500±25μm.
Diameter 150mm
Thickness 1500±25μm
phosphorus, boron or Antimony doped boron,<100>
SSP
Resistivity 1-100ohm cm
with 200A thermal oxide and 1200A nitride
TTV < 15um
BOW < 80um
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12
4″ CZ wafer, N type
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Diameter: 100 mm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-23meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1800
P/P
1-5
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
n-type Si:Sb
[100]
3″
800
P/E
0.022-0.028
SEMI Prime
n-type Si:Sb
[100]
3″
380
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[100]
3″
500
P/E
0.021-0.022
SEMI Prime
n-type Si:As
[100]
3″
1000
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[211]
3″
450
P/P
50-65
SEMI Prime
n-type Si:P
[111-4°]
3″
250
P/E
50-220
Prime, NO Flatst
n-type Si:P
[111]
3″
10000
P/E
20-60
SEMI Prime, Individual cst
n-type Si:P
[111-3°]
3″
380
P/E
19-25
SEMI Prime
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
P/E
>5
SEMI Prime, hard cst, LaserMark
n-type Si:P
[111]
3″
6000
P/E
5-10
SEMI Prime, Individual cst
n-type Si:P
[111]
3″
525
P/E
4.5-5.0
SEMI Prime
n-type Si:P
[111]
3″
500
P/P
4-6
Prime, NO [...]
2019-03-06meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
300
P/P
5-10
SEMI Test, Scratched and unsealed. Can be re-polished for extra fee
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI TEST (in Opened cassette), 2Flats
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Prime
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI TEST (with bad surface)
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Prime, hard cst, Back-side slightly darker than normal
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Test, Dirty wafers, can be cleaned for extra fee
p-type Si:B
[100]
4″
380
BROKEN
5-10
Broken P/E Wafers, [...]
2019-03-05meta-author
Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is [...]
The wide band gap semiconductor materials represented by GaN and SiC have the advantages of fast electron saturation drift and strong radiation resistance, and have a wide range of applications in solid-state lighting, electronic power and mobile communications. Among them, solid-state lighting is of [...]
2022-07-13meta-author