Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN offers 10*10mm2 SI (Semi-insulating) Freestanding GaN Substrate, which has a resistivity greater than 106 ohm-cm. Semi-insulating gallium nitride substrate with the advantages high critical breakdown electric field and good thermal stability are widely used in high-frequency and high-power devices. Following listed is one of the specifications: 1. [...]
Experimental conditions were investigated for growth of inclusion-free near-stoichiometric CdZnTe single crystals with a minimized concentration of native point defects. The positions of the stoichiometric line PS = 8×105exp (-1.76×104/T) (atm) and the room-temperature and high-temperature p-n lines were evaluated from high-temperature in situ [...]
Low Stress Nitride Silicon Wafers PAM XIAMEN offers Low Stress Nitride Silicon Wafers. Why use low stress nitride on your silicon wafers? Some uses include surface micromachining process that can fabricate the micromechanical structures when internal tensile stress and native nonporous morphology is required. SPECIFICATIONS Thickness range: 50Å [...]
PAM XIAMEN offers Aluminum Oxide Substrate Al2O3. Aluminum Oxide Ceramic Substrates Porperties Purity (wt%) 0.96 0.996 0.996 0.999 Density (g/cm3) > 3.75 3.88 3.87 3.92 Thermal conductivity (W/m. K) 24 34.7 35 35 Thermal Expansion (x10-6/oC) < 7.7 7~8.3 7~8.3 8.1 Dielectric Strength (Kv/mm) > 14 23.64 23.64 8.7 Dielectric Constant (at 1MHZ) 9.8 9.9 9.9 9.8 Loss Tangent (x10-4 @1MHZ) 4 1 1 < 1 Volume Resistivity (ohm-m) > 1013 at [...]
PAM XIAMEN offers 4″ FZ Intrinsic Silicon Wafer SSP 4″ FZ (100) intrinsic, SSP wafer Si FZ (100) dia 4’’ x 525µm intrinsic R > 20,000 ohm.cm one side polished with SEMI Std flats Roughness<0.5nm For more information, send us email at [email protected] and [email protected]
Semi-insulating GaAs (gallium arsenide) crystal with low defects and dopants can be offered by PAM-XIAMEN, one of gallium arsenide producers. Semi-insulating GaAs crystal refers that there is excess arsenic during the GaAs crystal growth process, leading to crystallographic defects, which is arsenic antisite defects. [...]
