Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at [email protected] and [email protected]
R-Plane Sapphire Substrate with SSP PAM-XIAMEN offers R-Plane（1-102） Sapphire Substrate, single side polished,please see below spec: 2”,R-Plane Sapphire Substrate with SSP No Item Specification 1 Material High Purity Al2O3 2 Diameter 50.8土0.1mm 3 Orientation R-plane<1-102>土0.2° 4 Thickness 430土15um 5 TTV ≤15um 6 Bow ≤10um 7 Warp ≤15um 8 Primary Flat Length 16.0土1.0mm 9 Front suface Roughmess(Ra) Ra≤0.3nm 10 Bock Surtace Roughness(Ra) 0.8~1.2um 11 Primary Flat Orienation A-plane+0.2° 12 Surtace onentation R-Plane土0.2° 13 Laser Mark back side or front side or no laser mark 14 Package 25pcsCassede.Vacum-sealed,Nitrogen-flled,Class-100 Cleanroom 3”,R-Plane Sapphire Substrate with SSP No ltem Specification 1 Material High [...]
GaN-On-Si Key Patent Analysis The size of sapphire substrates is increasing to response to the current trend toward the low LED price, but it is actually hard to grow sapphire single crystals to a large size. For this reason, research on adopting silicon that has [...]
Semiconductor doping is a key process step in the production of integrated circuits. In the semiconductor production process, crystalline silicon is used as the substrate material of the wafer, and its electrical conductivity is very poor. Silicon becomes a useful semiconductor only when small [...]
PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm Specifications Au/Ti/SiO2/Si substrate: 1.Structure: Au/Ti/ SiO2 on Si substrate Flim thickness: Au(111)=50 nm Ti=2 nm SiO2=300 nm 2.Substrate spec: Material:Si substrate Size: 4″ dia. Orientation:(100) Type:P type Dopant:B doped Thickness:525 um Grade: [...]
Silicon carbide has very stable characteristics, so that it can work stably in some harsh environments. Because of the stable chemical bonds, the technical threshold for silicon carbide production is very high. The growth conditions of silicon carbide crystal ingots are harsh, requiring high temperature (~2600℃) and high [...]
Study on the mechanism of using IR illumination to improve the carrier transport performance of CdZnTe detector Different wavelength IR light (770–1150 nm) was used to evaluate the effect of IR light on the carrier transport performance of CdZnTe detector. The effective mobility-lifetime product (μτ*) [...]
