Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers BN (h) – 2D crystal. Natural Boron Nitride Single Crystal, 0.6-1.0 mm Hexagonal boron nitride (h-BN) single crystals are ideal as a substrate for 2D materials. h-BN crystals are highly crystalline display strong Raman peak at 1566 cm-1 with FWHM less than [...]
PAM XIAMEN offers 1654nm laser diode wafers. Available Center Wavelengths: 1640nm – 1670nm Wavelength Tolerance: +/- 1nm CW Output Power (typical): 8mW (out of fiber) SMSR (typical): >40 dB Optical Linewidth: < 1.5 MHz Temperature Tuning Coefficient (typical): 0.1 nm/°C Current Tuning Coefficient (typical): 10 pm/mA Slope Efficiency (typical): 0.10 mW/mA For more [...]
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Antireflection-Coated Blue GaN Laser Diodes in an External Cavity and Doppler-Free Indium Absorption Spectroscopy Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Arsenic N+ 100 57,5 ± 2,5 110 ± 1 0.0 ± 1.0 ° 0.0028-0.0035 Ohmcm 150 ± 0.5 mm 440 ± 20 µm 40 5 40 6 SSP Arsenic N+ 111 57,5 ± 2,5 110 ± 1 4.0 ± 0.5 ° < 0.0035 Ohmcm 150 [...]
