PAM-XIAMEN offers 650nm laser diode (LD) wafer, which emits red visible light. The epi wafer for laser diode 650nm from us is composed of the epi layers: P+ GaAs, P- AlGaInP, undoped AlGaInP, undoped GaInP QW, undoped AlGaInP and N- AlGaInP, deposited on the [...]
2019-03-13meta-author
PAM-XIAMEN offers diamond on silicon wafer. Since diamond has a wide band gap, diamond thin films on silicon wafer, which is diamond epitaxial growth on silicon by MPCVD, is applied to wide band gap semiconductors, such as gas sensor devices, temperature sensor devices, radiation/infrared [...]
2019-04-19meta-author
PAM XIAMEN offers FZ & MCZ silicon ingot and silicon wafer:
Description
Growth Method
—
MCZ
Single crystal size
inch
2 – 8
Conductivity Type
—
N
P
Doped elements
—
P/Sb
B
Crystal Orientation
—
<111>
<110>
<100>
<111>
<110>
<100>
Resistivity
Ω.cm
0.0015-100
0.001-100
RRG
%
20
20
Oxygen Concentration
atoms/cm3
1.00E+18
1.00E+18
Carbon Concentration
atoms/cm3
5.00E+16
5.00E+16
Diameter
mm
55-157
55-157
Length
mm
50-500
50-500
Dislocation
EA/cm2
N/A
N/A
Swirl(After Oxidation)
—
N/A
N/A
Remarks:The above parameters can be customized.
FAQ about MCZ Silicon Wafers
Q:This is just a curiosity, but let me ask about the production method of [...]
2019-02-27meta-author
PAM XIAMEN offers GaN Template on Sapphire& Silicon.
No.1: Doped GaN Template on Sapphire
1-1GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp
1-2GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp
1-3GaN (0001) Template( Semi-insulating ,Fe-doped) on Sapphire, 2″x 2um,1sp
1-4Si-doped GaN [...]
2019-04-28meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author
Silicon carbide (SiC) is a hot research material in the field of quantum information technology. For example, defect vacancies in SiC (composed of silicon vacancies and adjacent carbon vacancies, hereinafter referred to as VV) have many advantages of NV centers in diamond, including triple [...]
2024-04-23meta-author