Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers Ti: Sapphire Crystal Ti: Sapphire Crystal Ti Sapphire Crystal Introduction Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm. This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers, mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]
PAM XIAMEN offers high-quality Bi2Te3 single crystal. Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride. It is a semiconductor which, when alloyed with antimony or selenium is an efficient thermoelectric material for [...]
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PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 40mm 250 P/E 1-100 SEMI Prime, Soft cst p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 280 P/P 1-5 SEMI Prime, p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime, p-type Si:B [100] 2″ 525 P/P 1-30 SEMI, p-type Si:B [100] 2″ 1000 P/P 1-10 SEMI Prime p-type Si:B [100] 2″ 1000 P/E 1-10 SEMI Prime p-type Si:B [100] 2″ 275 P/E 0.5-1.0 SEMI p-type Si:B [100] 2″ 3150 C/C >0.5 1Flat p-type Si:B [100] 2″ 280 P/P 0.4-0.6 SEMI Prime, p-type Si:B [100] 2″ 275 P/E 0.2-0.4 SEMI Prime, p-type Si:B [100] 2″ 279 P/P 0.08-0.12 SEMI Prime p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 300 P/E 0.016-0.017 Prime, NO Flats p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 250 P/P 0.015-0.020 SEMI Prime p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 280 P/P 0.015-0.020 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 0.015-0.020 Groups of [...]
PAM XIAMEN offers 2″ Monocrystalline silicon wafers with insulating oxide 2″ Monocrystalline silicon wafers with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 μm, Warping <35 μm P type Orientation <100> The thickness of the insulating oxide layer is 300 nm Resistance of the base plate ≥ 10 [...]
PAM XIAMEN offers Silver Single Crystal & Substrate. PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A surface roughness. PAM [...]
