Veeco MBE reactor for laser diodes
IPG Photonics adds 4th Veeco MBE reactor for laser diodes
Aug 29, 2012
The tool will be used to manufacture gallium arsenide based devices
Veeco Instruments has recently completed installation of a GEN2000 Edge MBE system at IPG Photonics Corporation.
The system was delivered to [...]
2012-08-30meta-author
PAM XIAMEN offers (112) Orientation Silicon Wafers.
If you don’t see what you need then please email us your specs.
Item
Type/Dopant
Ori
Dia (mm)
Thck (μm)
Surf.
Resistivity Ωcm
Comment
PAM3026
n-type Si:P
[112-5.0° towards[11-1]] ±0.5°
6″
875 ±10
E/E
FZ >3,000
SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
PAM3027
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
1,000 ±10
C/C
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
2019-02-22meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
950-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1000-1050
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
1975-2025
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-50
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-100
10-60
9900-10100
P/E
PRIME
76.2
N
Phos
CZ
-111
300-350
P/P
PRIME
76.2
N
Phos
CZ
-111
350-400
P/E
PRIME
76.2
N
Phos
CZ
-111
1975-2025
P/P
PRIME
76.2
N
Phos
CZ
-111
1-20
2900-3100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
4900-5100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
5900-6100
P/E
PRIME
76.2
N
Phos
CZ
-111
1-20
11900-12100
P/E
PRIME
76.2
N
Phos
CZ
-110
300-350
P/P
PRIME
76.2
N
Phos
CZ
-110
350-400
P/E
PRIME
76.2
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
76.2
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
76.2
P
Boron
FZ
-100
>3000
300-350
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
V-shaped defects in InGaN/GaN multiquantum wells
InGaN/GaN multiquantum well (MQW) structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition. From cross-sectional transmission electron microscopy (TEM), a number of V-shaped defects has been observed on the surface which are associated with mixed [...]
The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
2019-10-18meta-author