Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Veeco MBE reactor for laser diodes IPG Photonics adds 4th Veeco MBE reactor for laser diodes Aug 29, 2012 The tool will be used to manufacture gallium arsenide based devices Veeco Instruments has recently completed installation of a GEN2000 Edge MBE system at IPG Photonics Corporation. The system was delivered to [...]
PAM XIAMEN offers (112) Orientation Silicon Wafers. If you don’t see what you need then please email us your specs. Item Type/Dopant Ori Dia (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM3026 n-type Si:P [112-5.0° towards[11-1]] ±0.5° 6″ 875 ±10 E/E FZ >3,000 SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips PAM3027 n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 1,000 ±10 C/C FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
PAM XIAMEN offers 3″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 76.2 N Phos CZ -100 1-20 950-1050 P/E PRIME 76.2 N Phos CZ -100 1000-1050 P/E PRIME 76.2 N Phos CZ -100 1-20 1975-2025 P/E PRIME 76.2 N Phos CZ -100 1-20 2900-3100 P/E PRIME 76.2 N Phos CZ -100 1-50 2900-3100 P/E PRIME 76.2 N Phos CZ -100 1-20 5900-6100 P/E PRIME 76.2 N Phos CZ -100 10-60 9900-10100 P/E PRIME 76.2 N Phos CZ -111 300-350 P/P PRIME 76.2 N Phos CZ -111 350-400 P/E PRIME 76.2 N Phos CZ -111 1975-2025 P/P PRIME 76.2 N Phos CZ -111 1-20 2900-3100 P/E PRIME 76.2 N Phos CZ -111 1-20 4900-5100 P/E PRIME 76.2 N Phos CZ -111 1-20 5900-6100 P/E PRIME 76.2 N Phos CZ -111 1-20 11900-12100 P/E PRIME 76.2 N Phos CZ -110 300-350 P/P PRIME 76.2 N Phos CZ -110 350-400 P/E PRIME 76.2 P Boron CZ -100 1-20 43768 P/P PRIME 76.2 P Boron CZ -100 1-20 40-60 P/P PRIME 76.2 P Boron CZ -100 1-20 80-100 P/P PRIME 76.2 P Boron CZ -100 1-20 140-160 P/P PRIME 76.2 P Boron FZ -100 >3000 300-350 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
PAM XIAMEN offers SrTiO3 single crystal. SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
V-shaped defects in InGaN/GaN multiquantum wells InGaN/GaN multiquantum well (MQW) structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition. From cross-sectional transmission electron microscopy (TEM), a number of V-shaped defects has been observed on the surface which are associated with mixed [...]
The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
