Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at [email protected] and [email protected]
The researchers have taken the first step towards transferring spin-oriented electrons between a topological insulator (orange layer) and a conventional semiconductor (blue layer). Credit: Linköping Universitet A discovery of how to control and transfer spinning electrons paves the way for novel hybrid devices that could [...]
PAM-XIAMEN offers larger size of N type FS GaN substrate including Si-doped and undoped one as follows: 1. N Type GaN Substrate Datasheet 1.1 4″(100mm) Undoped Free-standing GaN Substrate Item PAM-FS-GaN100-U Conduction Type Undoped Size 4″(100)+/-1mm Thickness 350-450um Orientation C-axis(0001)+/-0.5° Primary Flat Location (1-100)+/-0.5° Primary Flat Length – Secondary Flat Location (11-20)+/-3° Secondary Flat Length – Resistivity(300K) <0.5Ω·cm Dislocation Density <5×10^6cm-2 FWHM – TTV <=35um BOW <=50um Surface Finish Front Surface:Ra<0.2nm.Epi-ready polished Back Surface:1.Fine ground 2.Rough grinded Usable Area ≥ 90 [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-5 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° 10,000Ωcm>Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at [email protected] and [email protected]
InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates The InGaN multi-quantum-well (MQW)-structure laser diode (LD) was grown on an epitaxially laterally overgrown GaN on sapphire. The lowest threshold current densities between 1.2 and 2.8 kA cm−2 were obtained when the number of InGaN well layer was [...]
GaAs/AlAs wafer We provide wafer of N+ or P+ GaAs epi with AlAs layer on N+ or P+ GaAs substrate as follows: No.1 spec:2-inch p+ GaAs Epi with AlAs layer on p+ GaAs substrate. Structure(from bottom to top): Layer0: 350 um p+ semi-conducting GaAs substrate, >E18 doping, any dopant [...]
PAM XIAMEN offers Silicon Wafers. Our clients have purchased the following wafers for the experiments above: Silicon 76.2mm P /B <100> 0-100 406-480um SSP Silicon 76.2mm N /P <100> 0-100 406-480um SSP For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, [...]
