PAM XIAMEN offers 60+1mm FZ Si Ingot -3
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 8″ CZ semiconductor grade silicon wafer SSP Growth Method: CZ Diameter: 200.0±0.5mm Type/Dopant: P/Boron Orientation: (111) ±0.5° Resistivity: <1Ωcm Notch: SEMI Standard Thickness: 1,000 ±25um TTV <6um Bow <60um Warp <60um Frontside Surface: Polished Backside Surface: Etched Particle ≦10@≧0.3um Moreover, 8″CZ Red P doped wafer (dopant Red Phos) with resistivity<0.0016Ωcm is available. (PAM180413) For more information, [...]
Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3 We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
Fully spectroscopic x/γ-ray imaging is now possible thanks to advances in the growth of wide-bandgap semiconductors. One of the most promising materials is cadmium zinc telluride (CdZnTe or CZT), which has been demonstrated in homeland security, medical imaging, astrophysics and industrial analysis applications. These [...]
PAM XIAMEN offers indium gallium arsenide (InGaAs) epi layer on semi-insulating InP substrate by MOCVD deposition. InGaAs is a light-sensitive material, and its response band can be adjusted by adjusting the value of In component x to obtain a response of 0.87~3.5um. The working band of [...]
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ). PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation. 5 x 5 [...]
PAM XIAMEN offers 3″ FZ Silicon Ingot with Diameter 76mm Silicon ingot, per SEMI, G Ø76mm FZ n-type Si:P[100]±2.0° Ro=(1,500-7,000)Ohmcm, Ground Ingot, NO Flats, MCC Lifetime>1000µs, Oxygen<1E16/cc, Carbon<1E16/cc, Adequately packed, CofC: present. For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
