PAM XIAMEN offers 60+1mm FZ Si Ingot -3
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN offers A Plane U-GaN Freestanding GaN Substrate Item PAM-FS-GAN A-U Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation A plane (11-20) off angle toward M-axis 0 ±0.5° A plane (11-20) off angle toward C-axis -1 ±0.2° Conduction Type N-type / Undoped Resistivity (300K) < 0.1 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤5 x 106 cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at [email protected] and [email protected]
PAM XIAMEN offers LiF Lithium Fluoride Crystal. LiF crystal has excellent VUV region transmittance. It is used for windows, prisms, and lenses in the visible and infrared in 0.104 μm – 7 μm. LiF crystal is sensitive to thermal shock and would be attacked by [...]
GaAs epi wafer for microelectronic and optoelectronic devices PAM XIAMEN offers GaAs epi wafer for microelectronic and optoelectronic devices including MESFET HEMT, ICMMIC HBT, HALL device, visible light LED, IR LED, LD and solar cell. Electronic devices Material(layer/substrate) Application Technology Tends Material Required Digital IC (MESFETHEMT) GaAs/GaAs GaAlAs/GaAs Ultra-high-speed computers PC,ATM,Image Processing High level [...]
Lawrence Livermore National Laboratory (LLNL) has installed and commissioned the highest peak power laser diode arrays in the world, representing total peak power of 3.2 megawatts (MW). To drive the diode arrays, LLNL needed to develop a completely new type of pulsed-power system, which supplies [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title: Frequency Comb Generation From Stimulated Brillouin Scattering and Semiconductor Laser Diodes Published by: (Electrical Engineering) in The [...]
PAM XIAMEN offers 12″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [100] 12″ 750 P/E MCZ 1-100 TEST grade, SEMI notch, TTV<25µm p-type Si:B [100] 12″ 775 P/P MCZ 1-100 Prime, SEMI notch, TTV<3µm p-type Si:B [100] 12″ 775 P/E MCZ 1-100 Prime, SEMI notch,TTV<10µm p-type Si:B [100] 12″ 775 P/P 0.01-0.02 Prime, SEMI notch,TTV<4µm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
