PAM XIAMEN offers 60+1mm FZ Si Ingot -3
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Cesium iodide crystals. Cesium iodide crystals include three different types: CsI(Tl), CsI(Na) and pure CsI. CsI(Tl) is the most popular alkali halide scintillation crystal apart from NaI(Tl). Light output: 45% in NaI(Tl). Its emission spectrum has a broad band at 350-700nm and a peak at 550nm. Its [...]
An electrolytic etching technique has been developed which can remove p‐type GaAs substrates from thin (2–10µ) n‐type layers of or . Sodium hydroxide is used as the electrolyte, and is sprayed continually over the etching surface to prevent the build‐up of “flakes” on the p‐type surface [...]
GaSb( Gallium Antimonide) wafer PAM-XIAMEN grows high quality Gallium Antimonide (GaSb) single crystal ingots. We have round, saw cut, lap and polish GaSb wafers and can supply an epi-ready surface quality. GaSb crystal is a compound formed by 6N pure Ga and Sb element and is grown [...]
Polishing Wafer PAM-XIAMEN’ product line includes single-sided polishing (SSP) and double-sided polishing (DSP) wafer substrate or called mirror polished wafer for applications of semiconductors, MEMS, and other chips that require a strictly controlled flatness often require double-sided polishing chips. They are also necessary for a [...]
PAM XIAMEN offers 4″CZ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/P 4″Ø×525±25µm, p-type Si:B[100]±0.5°, Ro=(0.001-0.005)Ohmcm, TTV<5µm, Bow<30µm, Warp<30µm, Both-sides-polished, SEMI Flat (one), Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and [...]
THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]
