PAM XIAMEN offers 60+1mm FZ Si Ingot -3
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title:Characterization and comparison of commercially available silicon carbide (SIC) power switches Published by: K. Haehre ; M. Meisser ; F. Denk ; [...]
PAM XIAMEN offers Single-emitter LD Chip 880nm @8W. Brand: PAM-XIAMEN Wavelength: 880nm Stripe width: 150um Output Power: 8W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
Growth of M-plane GaN(1-1 00) on γ-LiAlO2(100) Using RF plasma-assisted molecular beam epitaxy, we succeeded in the growth of GaN(1 0 0) on γ-LiAlO2(1 0 0). The crystal orientation and structural properties of 1.5 μm thick GaN films are investigated by means of reflection high-energy electron diffraction, X-ray diffraction, atomic [...]
PAM XIAMEN offers 80+1mm FZ Si Ingot-2 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers high-quality Al2O3 (Sapphire). R-Plane (1-102) Square Al2O3(11-02) substrate Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP Al2O3-Sapphire Wafe, R Plane, 5x5x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x0.5mm, 1SP Al2O3-Sapphire Wafer, R Plane, 10x10x0.5mm, 2SP Al2O3- Sapphire Wafer, R Plane, 10x10x1.0mm, 1SP Al2O3-Sapphire Wafe, R Plane, 0.5″x0.5″x0.5 [...]
PAM XIAMEN offers 3″CZ Prime Silicon Wafer-1 Item4, 50pcs Silicon wafer: i. Diameter: 76.2 mm ± 0.5 mm, ii. Thickness: 375μm ± 25μm iii. Doping: N type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: [...]
