PAM XIAMEN offers 60+1mm FZ Si Ingot -3
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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PAM XIAMEN offers high-quality Bi2Se3. Molar mass: 654.8 g/mol Appearance: Dull grey Lattice Parameters: a=4.14 A, c=28.7 A Density: 6.82 g/cm^3 Melting point:710 °C (1,310 °F; 983 K) Structure: Hexagonal Displaying products 1 – 1 of 1 results Bi2Se3 Single crystal (0001) orn. 10x10x1.0 mm, both sides polished [...]
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi4Te7, GeSb4Te7 and Ge(Bi1−xSbx)4Te7 solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved by the substitution of Bi by [...]
InGaAsN epitaxially on GaAs or InP wafers PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows: Layer Doping Thickness (um) Remark GaAs undoped ~500 <001> wafer substrate InGaAsN* undoped 0.150 band gap <1 eV Al(0.3)Ga(0.7)As undoped 0.5 GaAs undoped 2 Al(0.3)Ga(0.7)As undoped 0.5 ITEM x/y Doping carrier conc.(cm3) Thickness（um） wave length(um) Lattice mismatch InAs(y)P 0.25 none 5.0*10^16 1.0 – In(x)GaAs 0.63 none 1.0*10^17 3.0 1.9 600<>600 InAs(y)P 0.25 S 1.0*10^18 205.0 – InAs(y)P 0.05->0.25 S 1.0*10^18 4.0 – InP – S 1.0*10^18 0.3 – Substrate:InP S (1-3)*10^18 ~350 – Source:PAM-XIAMEN For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com [...]
The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
X-ray Photon Counting Imaging System PAM-128 is a test system based on CZT photon counting array detector. It integrates four multi-pixel photon counting module and a thermal control system. The energy it can test ranges from 20~160KeV. Its testing resolution is 1.5lp/mm. And it support [...]
