PAM XIAMEN offers 60+1mm FZ Si Ingot -3
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
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PAM-XIAMEN offers (20-2-1) Plane Semi-insulating Freestanding GaN Substrate, which is semiconductor material for the development of iii-nitride device, microelectronic devices and optoelectronic devices. The following specification of free standing GaN crystal substrate is for sale. 1. Semi-insulating Freestanding GaN Substrate Specification Item PAM-FS-GAN(20-2-1)-SI Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5° (20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2° Conduction Type Semi-Insulating Resistivity (300K) >106 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness: Front [...]
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° 0.002 – 0.003 Ohmcm 200 ± 0.1 mm 725 ± 15 µm 6 60 8 SSP Boron P 100 0,0 ± 0,0 011 ± 1 3.5 – 7.0 Ohmcm 200 ± [...]
GaAs epi wafer for microelectronic and optoelectronic devices PAM XIAMEN offers GaAs epi wafer for microelectronic and optoelectronic devices including MESFET HEMT, ICMMIC HBT, HALL device, visible light LED, IR LED, LD and solar cell. Electronic devices Material(layer/substrate) Application Technology Tends Material Required Digital IC (MESFETHEMT) GaAs/GaAs GaAlAs/GaAs Ultra-high-speed computers PC,ATM,Image Processing High level [...]
The realization of low-dislocation-density bulk GaN crystals is necessary for use in the fabrication of future high-power devices with low power consumption. In this study, we attempted the regrowth of low-dislocation-density (104–105 cm−2) GaN substrates to fabricate thick and low-dislocation-density GaN crystals using the dipping [...]
1. System introduction: The cadmium zinc telluride (CZT) technology based MXA-128 X-ray photon counting imaging system is composed of pixel linear array CZT detector modules and low noise ASICs. The energy suits for it ranging from 20keV to 160keV. Its energy resolution is 0.5lp/mm. [...]
PAM XIAMEN offers Mica disk. Pure Mica Sheet Highest Grade Mica Disks, 9.9mm diameter 10/pkg Highest Grade Mica Disks, 20mm diameter 10/pkg Highest Grade Mica Sheets, 15mm x 15mm (0.59” x 0.59″), 0.15 to 0.177mm (0.006-0.007″) thick, 10/pkg Hi-Grade Mica Sheets, 15mm x 15mm [...]
