PAM XIAMEN offers 60+1mm FZ Si Ingot -3
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 DSP Boron P 100 0,0 ± 0,0 110 ± 0,20 0.0 ± 0.1 ° 1 – 20 Ohmcm 150.0 ± 0.2 mm 675 ± 5 µm 60 3 6 DSP Boron P 100 57,5 ± 2,5 110 ± 0,50 0.0 ± 0.5° 30 – [...]
PAM XIAMEN offers 6″CZ Prime Silicon Wafer Item7, 50pcs Silicon wafer: i. Diameter: 150 mm ± .5 mm, ii. Thickness: 675μm ±25μm iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: CZ [...]
Low dislocation density high-quality thick hydride vapour phase epitaxy (HVPE) GaN layers Thick high quality gallium nitride (GaN) layers presenting a dislocation density reduced to 6×106 cm−2were grown by hydride vapour phase epitaxy (HVPE). Scanning electron microscopy (SEM) characterizations, X-ray double diffraction (XRD) measurements, photoluminescence and [...]
PAM XIAMEN offers 50.8mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM1947 P/B [100] 2″ 280um P/E 0-100 ohm-cm Test Grade with flat PAM1948 N/Ph [100] 2″ 280um P/E 0-100 ohm-cm Test Grade with flat PAM1949 P/B [100] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1950 N/Ph [100] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1951 P/B [100] 2″ 280um P/E 0.001-0.005 ohm-cm Prime Grade with Flat PAM1952 P/B [111] 2″ 280um P/E 1-10 ohm-cm Prime Grade with Flat PAM1953 P/B [111] 2″ 280um P/E 0.001-0.005 ohm-cm Prime Grade with [...]
Some customers worry about that when they transfer LED onto other substrates using laser liftoff, these patterns of LED wafer on patterned sapphire substrate. PSS will scatter the laser. In fact, some of our customers also use 4” epi wafers on PSS for LLO, [...]
Targeted Stress LPCVD Nitride PAM XIAMEN offers Targeted Stress LPCVD Nitride Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications. Please provid us with your application for an immediate quote. For more information, please visit our website: https://www.powerwaywafer.com, send [...]
