PAM XIAMEN offers high-quality Bi2Se3.
Molar mass: 654.8 g/mol
Appearance: Dull grey
Lattice Parameters: a=4.14 A, c=28.7 A
Density: 6.82 g/cm^3
Melting point:710 °C (1,310 °F; 983 K)
Structure: Hexagonal
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Bi2Se3 Single crystal (0001) orn. 10x10x1.0 mm, both sides polished [...]
2019-04-17meta-author
PAM XIAMEN offers SiO2 (single crystal quartz).
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries.
Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi4Te7, GeSb4Te7 and Ge(Bi1−xSbx)4Te7 solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved by the substitution of Bi by [...]
2019-10-28meta-author
InGaAsN epitaxially on GaAs or InP wafers
PAM-XIAMEN provides InGaAsN epitaxially on GaAs or InP wafers as follows:
Layer
Doping
Thickness (um)
Remark
GaAs
undoped
~500
<001> wafer substrate
InGaAsN*
undoped
0.150
band gap <1 eV
Al(0.3)Ga(0.7)As
undoped
0.5
GaAs
undoped
2
Al(0.3)Ga(0.7)As
undoped
0.5
ITEM
x/y
Doping
carrier conc.(cm3)
Thickness(um)
wave length(um)
Lattice mismatch
InAs(y)P
0.25
none
5.0*10^16
1.0
–
In(x)GaAs
0.63
none
1.0*10^17
3.0
1.9
600<>600
InAs(y)P
0.25
S
1.0*10^18
205.0
–
InAs(y)P
0.05->0.25
S
1.0*10^18
4.0
–
InP
–
S
1.0*10^18
0.3
–
Substrate:InP
S
(1-3)*10^18
~350
–
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com [...]
The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is [...]
2020-02-11meta-author
X-ray Photon Counting Imaging System
PAM-128 is a test system based on CZT photon counting array detector. It integrates four multi-pixel photon counting module and a thermal control system. The energy it can test ranges from 20~160KeV. Its testing resolution is 1.5lp/mm. And it support [...]
2019-04-24meta-author