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Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm−3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT [...]
A Glance of GaAs Wafer Market According to Mamms Consulting, as one of the most mature compound semiconductors, GaAs is everywhere, and it has become the cornerstone of power amplifiers in every smart phone! In 2018, the GaAs RF business is expected to account for [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [100-4.0°] ±0.5° 2″ 400 P/E FZ >20,000 SEMI Prime, TTV<5μm Intrinsic Si:- [100] 2″ 400 P/E FZ >20,000 SEMI Prime, TTV<5μm Intrinsic Si:- [100] 2″ 200 P/P FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 350 P/P FZ >10,000 SEMI Test, Wafers with edge chips Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 500 ±10 P/E FZ >10,000 SEMI Prime Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000-10,000 SEMI Prime Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000-10,000 SEMI Prime, in hard cassettes of 2 & 5 wafers Intrinsic Si:- [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI Intrinsic Si:- [111] ±0.5° 2″ 330 P/P FZ >20,000 SEMI Intrinsic Si:- [111] [...]
According to data published by WSTSabout worldwide semiconductor market, all product categories and regions are forecasted to grow steadily but moderately in the next two years, under the assumption of a further macro economy recovery throughout the entire forecast period and maturing historically strong [...]
Since more and more mobile phone manufacturers launch the gallium nitride fast charger, what is a GaN fast charger? A gallium nitride charger is that the core device of such a fast charger for smartphones, laptops and etc. adopts GaN FETs chip, which can be offered by [...]
PAM XIAMEN offers 6″ silicon ignot. Silicon ingot, per SEMI, G 150.7±0.3mmØ, FZ p-type Si:B[100]±2.0°, Ro=(600-900)Ohmcm, RRV<8%, Ground Ingot, NO Flats. NOTE: Oxygen<1E16/cc, Carbon<1E16/cc, MCC Lifetime>1000µs, CofC inlude Resisistiviy (9points) and MC Lifetime measurement data, RRV calculations. For more information, please visit our website: [...]