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PAM XIAMEN offers 2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm 2inch diameter wafer made of monocrystalline silicon with isolation oxide Diameter 50.8mm Polishing: one-sided for microelectronics Type of conductivity and alloying: not specified Surface orientation: not specified Primary and secondary flat orientation: not specified Thickness: 675 microns±20 microns Wedge (TTV): less than 15 microns TTV<15μm Distortion: less than 35 microns (the value is unchanged) Thickness of the isolation oxide: at least 20 nm Front side: polished Back side: lapped-etched For more information, send us email at [email protected]owerwaywafer.com and [email protected]
PAM XIAMEN offers single crystal LiTaO3. LiTaO3 X-cut LiTaO3 optical grade, X-cut, 10x10x0.5mm, 2 SP LiTaO3 saw grade, X-cut, 10x10x0.5mm, 1sp LiTaO3 saw grade, X-cut, 3″ Dia x 0.5mm wafer, 1sp LiTaO3 Y-cut LiTaO3 optical grade, Y-cut, 10x10x0.5 mm, 2sp LiTaO3 saw grade, Y-cut, 10x10x0.5mm, [...]
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline). General Properties for Titanium Symbol Ti Atomic Number 22 Atomic Weight: 47.867 Crystal structure: HCP Lattice constant at room temperature a: 0.295 nm Lattice constant at room temperature b: 0.468 nm Density: 4.506 g/cm3 Melting Point: 1668°C [...]
PAM-128 is a test system based on CZT photon counting array detector. It integrates four multi-pixel photon counting module and a thermal control system. The energy it can test ranges from 20~160KeV. Its testing resolution is 1.5lp/mm. And it support multi-energy-region test. It can [...]
PAM XIAMEN offers Silicon Ingots. Material Description FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm) FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm) FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, [...]
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]