The effect of hydrogen plasma treatment on the Au–CdZnTe interface

  • Home
  • News
  • The effect of hydrogen plasma treatment on the Au–CdZnTe interface
This paper investigates the hydrogen plasma treatment effects on the interface of Au/CdZnTe contact. Hydrogen plasma with high energy is the smallest and lightest atomic mass, which is easy to enter into the crystal surface to fill the vacancy defects. The Au/CdZnTe samples were treated by the microwave hydrogen plasma with the power of 60 W (average power density of 0.5 W/cm2) and the frequency of 13.6 MHz under different treatment times. Scanning electron microscope (SEM), current–voltage (I–V) and adhesion strength measurement were performed to analyze the interface properties of Au/CdZnTe before and after the hydrogen plasma treatment. The results show that the hydrogen plasma treatment can reduce the surface leakage current, decrease the point defects and improve the performance of the electrode contacts.
Highlights
► The Au/CZT samples were treated by the microwave hydrogen plasma.
► The hydrogen plasma treatment of Au/CZT for 4–8 min improved the contact performance.
► After the hydrogen plasma treatment over 16 min, the properties of Au/CZT grow worse.
 
Fig. 1. I–V curves of Au/CZT samples at different hydrogen plasma treatment time.
Source: Surface and Coatings Technology
If you need more information about The effect of hydrogen plasma treatment on the Au–CdZnTe interface, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
2013-11-06 , ,

Share this post

Related Posts

YSZ crystal-2

PAM XIAMEN offers YSZ crystal. YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter. YSZ Substrate (110) YSZ (110) 0.5″x0.5″x0.5mm, 1SP YSZ (110) 0.5″x0.5″x0.5mm, [...]

2019-05-21meta-author
Precipitation in low temperature grown GaAs

Precipitation in low temperature grown GaAs The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied as a function of the post-growth annealing temperature by three independent methods: transmission electron microscopy (TEM), Raman scattering, and for the first time [...]

2014-03-12meta-author
LITAO3 LITHIUM TANTALATE CRYSTAL

PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.                                             Major capability parameter Material purity >99.995% Crystal structure M6 Unit cell constant a=5.154Å   c=13.783 Å Melt point（℃） 1650 Density 7.45（g/cm3） Hardness 5.5~6（mohs） Color Colorless Index of refraction no=2.176 ne=2.180 （633nm） Through scope 0.4～5.0mm Resistance coefficient 1015wm Dielectric [...]

2019-03-13meta-author
silicon ingot with FZ Intrinsic undoped, MCC lifetime more than 1000Ωcm

PAM-XIAMEN offers silicon ingot with FZ Intrinsic undoped, MCC lifetime (Minority Charge Carrier Lifetime) more than 1000Ωcm. An intrinsic(pure) semiconductor, also called an undoped semiconductor or i-type semiconductor, is a pure semiconductor without any significant dopant species present. The number of charge carriers is therefore determined by the [...]

2019-03-15meta-author
GALLIUM NITRIDE GAN TEMPLATE ON SAPPHIRE 0001 N-TYPE P-TYPE SI

PAM XIAMEN offers (Gallium Nitride)GaN Template on Sapphire. C plane (0001).Gallium Nitride (GaN) Template on Sapphire,are available, this GaN templates includes N-type, P-type or semi-insulating (SI): 1.Wafer List: 2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single side polished or double side polished. [...]

2019-03-11meta-author
4″ Silicon EPI Wafer-2

PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 37 p- Si:B 35±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 16.5 n- Si:P 12.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 13±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 7±1 n- Si:P 12±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 14.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 7 n- Si:P 12±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 p- Si:B 80.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 n- Si:P 27±10% P/N/N+ 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 105 p- Si:B 0.0035±10% P/N/N+ 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 26 n- Si:P 5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10.15 n- Si:P 3.8±0.5 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 6.8±0.8 n- Si:P 0.55±0.15 N/N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 16.5 n- Si:P 35 ±10% N/N+ 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 19±1.3 n- Si:P 25±5 N/N/N+ 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 54.5±3.6 n- Si:P 4.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 20 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.09 ±10% N/N+ 4″Øx400μm n- [...]

2019-03-08meta-author