Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at [email protected] and [email protected]
Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd Powerway wafer develops and manufactures wafers with Gallium Arsenide (GaAs), Gallium Nitride (GaN) technologies advanced high-performance RF solutions for customers worldwide. We are a leading semiconductor wafer in market serving customers in mobile devices,3G and 4G base station,WLAN,WiMAX,GPS,defense and aerospace markets. We have GaAs [...]
PAM XIAMEN offers silicon wafers Silicon Wafer Mobility Calculator Indium Tim Oxide (ITO) – Float Zone Silicon – LiNbO3 – InGaAs – Nitride on Silicon – Aluminum – Silicon Carbide (SiC) – GaN on Sapphire For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
Solar Silicon Wafers PAM XIAMEN offers Solar Silicon Wafers. Limiting Efficiency It has been well established that the limiting efficiency of single crystals falls at about 29% [Swanson] this limit was established in the seminal work by Tiedje. In figure 1 we can see this limiting efficiency [...]
PAM XIAMEN offers Aluminum on Silicon Wafer. Aluminum Film on Silicom Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:<0.005 ohm.cm Aluminum Film on Silicon Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:1-10 ohm.cm Aluminum Film on Silicon Wafer, [...]
SiC devices are made from silicon carbide(SiC) wafers. So, here comes a question: how to obtain a silicon carbide wafer? Generally, a SiC wafer is cut from cylindrical SiC boules. As for the cutting process, methods for cutting silicon carbide ingots are introduced here. A diamond [...]
Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs [...]
