Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at [email protected] and [email protected]
PAM XIAMEN offers 3″ Prime EPI Wafer. Details of Prime 3″ Silicon Wafer Specification CZ SUBSTRATE: Orientation : 111 OFF orientation : 3° – 4° Type/Dopant : n/Sb Resistivity Ω cm : <0.018 Diameter mm : 76.2 +/- 0.5 Flats : SEMI Flat, location [...]
GaAs(111) crystal wafer PAM XIAMEN offers n type/Si doped, undoped, and p type GaAs(111) crystal wafer: 1.Wafer List GaAs ,Growing Method: VGF (111)A , SI, undoped, 2″ dia x 0.5 mm, 1 sp GaAs ,Growing Method: VGF (111)A , SI, undoped, 4″ dia x 0.55 mm, 1 [...]
PAM XIAMEN offers 2″ Silicon Wafer. Diameter (mm) Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 50.8 N Phos FZ (111) Off 2″ Towards (110) 2k-5k 350-400 P/E PRIME 50.8 N Phos CZ -100 1-20 10-30 P/P PRIME 50.8 N Phos CZ -100 1-20 40-60 P/P PRIME 50.8 N Phos CZ -100 1-20 80-100 P/P PRIME 50.8 N Phos CZ -100 1-20 140-160 P/P PRIME 50.8 N Phos FZ -100 >1000 200-500 P/E PRIME 50.8 N Phos FZ -100 >1000 200-500 P/P PRIME 50.8 N Phos CZ -100 225-275 P/P PRIME 50.8 N Phos FZ -100 >3000 225-275 P/P PRIME 50.8 N As CZ -100 .001-.005 250-300 P/E PRIME 50.8 N Sb CZ -100 .005-.02 250-300 P/P PRIME 50.8 N Phos FZ -100 >3000 250-300 P/E PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/DTOx PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/Ni PRIME 50.8 N Phos CZ -100 1-20 250-300 P/E/WTOx 50.8 N Phos FZ -100 2000-5000 275-325 P/P PRIME 50.8 N Phos CZ -100 450-500 P/P PRIME 50.8 N Phos CZ -100 43485 500-550 P/E PRIME 50.8 N Phos CZ -100 1000-1050 P/E PRIME 50.8 N Phos CZ -100 1-20 2900-3100 P/E PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal [...]
The Gallium Nitride Era is Coming Because of the smaller form factor, better thermal performance, and higher efficiency of gallium nitride (GaN) devices, the industry has been looking forward to it for a long time. In recent years, as GaN-on-SiC devices have begun to be [...]
THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]
With the increasing development of semiconductor devices, silicon and silicon-based materials still show their superior properties, and it will still be an important material for semiconductor devices and integrated circuits. With the decreasing size of devices, the resistivity, impurity distribution, film thickness and quality [...]
