Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at [email protected] and [email protected]
PAM-XIAMEN, an epi-provider for GaN LED on Si, can offer high performance blue and green light-emitting diode prototypes that grow 2”, 4”, 6” and 8” gallium nitride (GaN) layers based on LED wafer structure on silicon substrate as well as sapphire substrates. Silicon is a low-cost compared with sapphire substrates, [...]
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PAM XIAMEN offers thinnest Silicon Wafers. We have sold Silicon Wafers with a 2 micron thickness. But our biggest selling thin silicon wafer is: 100mm P(100) 1-10 ohm-cm 50um SSP and DSP TTV <2um Please let us know what specs you would like us to quote? For more information, [...]
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Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in [...]
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