PAM XIAMEN offers 4″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
100
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
100
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
100
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
100
P
Boron
CZ
-100
1-20
180-200
P/P
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/E
PRIME
100
P
Boron
CZ
-100
1-20
300-350
P/P
PRIME
100
P
Boron
CZ
-100
1-20
350-400
P/P
PRIME
100
P
Boron
CZ
-100
1-20
375-425
P/E
PRIME
100
P
Boron
CZ
-100
.001-.005
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.005-.02
450-500
P/P
PRIME
100
P
Boron
FZ
-100
>3000
450-500
P/P
PRIME
100
P
Boron
CZ
-100
1-20
450-500
P/P
PRIME
100
P
Boron
CZ
-100
.001-.005
500-550
P/E
PRIME
100
P
Boron
CZ
-100
.005-.02
500-550
P/E
PRIME
100
P
Boron
FZ
-100
>3000
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/DTOx
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/Ni
PRIME
100
P
Boron
CZ
-100
1-20
500-550
P/E/WTOx
100
P
Boron
CZ
-100
1-20
950-1050
P/E
PRIME
100
P
Boron
CZ
-100
1-20
950-1050
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers CERIUM FLUORIDE CEF3 CRYSTAL.
To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote.
Cerium fluoride, CeF3, is a good scintillation crystal with high density and short decay time. Cerium fluoride crystal is a good material in measurement [...]
2019-03-11meta-author
PAM XIAMEN offers GaAs (100) Te-doped crystal .
GaAs (100), N type Te doped, 10×10 x 0.35 mm, 1SP
GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP
GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te [...]
2019-04-22meta-author
The GaN lattice mismatch grown on silicon carbide substrates is low. The low lattice mismatch of gallium nitride on SiC wafers indicates that the lattices of layer 1 and layer 2 match each other. The better the match, the fewer defects, and the better the performance and lifetime [...]
2021-04-26meta-author
PAM XIAMEN offers 6″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:As
[100]
6″
675
OxP/EOx
0.001-0.005
SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick
p-type Si:B
[100]
6″
735
P/P
FZ >50
Prime, TTV<2μm
p-type Si:B
[100]
6″
650
P/P
FZ 8-13
SEMI Prime (57.5mm)
n-type Si:P
[100]
6″
475
P/P
FZ 60-75
SEMI Prime, MCC Lifetime>14,980μs, Lasermark
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
800 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
950 ±10
P/P
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI Prime (57.5mm)
Intrinsic Si:-
[100]
6″
675
P/P
FZ >10,000
SEMI [...]
2019-03-04meta-author
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2485
p–type Si:B
[100]
4″
3000
P/E
1–100
SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers
PAM2486
p–type Si:B
[100]
4″
3000
P/E
1–30
SEMI, 2Flats, Individual cst
PAM2487
p–type Si:B
[100]
4″
3175
P/P
1–10
SEMI Prime, 2Flats, Individual cst, TTV<8μm
PAM2488
p–type Si:B
[100]
4″
3175
P/P
1–10
SEMI Prime, 2Flats, Individual cst, [...]
2019-02-19meta-author