Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 4″ Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 100 P Boron CZ -100 1-20 43768 P/P PRIME 100 P Boron CZ -100 1-20 40-60 P/P PRIME 100 P Boron CZ -100 1-20 80-100 P/P PRIME 100 P Boron CZ -100 1-20 180-200 P/P PRIME 100 P Boron CZ -100 1-20 300-350 P/E PRIME 100 P Boron CZ -100 1-20 300-350 P/P PRIME 100 P Boron CZ -100 1-20 350-400 P/P PRIME 100 P Boron CZ -100 1-20 375-425 P/E PRIME 100 P Boron CZ -100 .001-.005 450-500 P/P PRIME 100 P Boron CZ -100 .005-.02 450-500 P/P PRIME 100 P Boron FZ -100 >3000 450-500 P/P PRIME 100 P Boron CZ -100 1-20 450-500 P/P PRIME 100 P Boron CZ -100 .001-.005 500-550 P/E PRIME 100 P Boron CZ -100 .005-.02 500-550 P/E PRIME 100 P Boron FZ -100 >3000 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E PRIME 100 P Boron CZ -100 1-20 500-550 P/E/DTOx PRIME 100 P Boron CZ -100 1-20 500-550 P/E/Ni PRIME 100 P Boron CZ -100 1-20 500-550 P/E/WTOx 100 P Boron CZ -100 1-20 950-1050 P/E PRIME 100 P Boron CZ -100 1-20 950-1050 P/P PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
PAM XIAMEN offers CERIUM FLUORIDE CEF3 CRYSTAL. To better serve you, we would like to discuss your specific requirement, Please Contact Us for a quote. Cerium fluoride, CeF3, is a good scintillation crystal with high density and short decay time. Cerium fluoride crystal is a good material in measurement [...]
PAM XIAMEN offers GaAs (100) Te-doped crystal . GaAs (100), N type Te doped, 10×10 x 0.35 mm, 1SP GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, 1SP GaAs (100) orientation, 2 deg OFF Toward [101] +/- 0.5 deg, Te [...]
The GaN lattice mismatch grown on silicon carbide substrates is low. The low lattice mismatch of gallium nitride on SiC wafers indicates that the lattices of layer 1 and layer 2 match each other. The better the match, the fewer defects, and the better the performance and lifetime [...]
PAM XIAMEN offers 6″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:As [100] 6″ 675 OxP/EOx 0.001-0.005 SEMI TEST (spots & minor visual defects), 1Flat (57.5mm), Thermal Oxide 0.1μm±5% thick p-type Si:B [100] 6″ 735 P/P FZ >50 Prime, TTV<2μm p-type Si:B [100] 6″ 650 P/P FZ 8-13 SEMI Prime (57.5mm) n-type Si:P [100] 6″ 475 P/P FZ 60-75 SEMI Prime, MCC Lifetime>14,980μs, Lasermark n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 800 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs n-type Si:P [112-5° towards[11-1]] ±0.5° 6″ 950 ±10 P/P FZ >3,000 SEMI, 1 JEIDA Flat (47.5mm), TTV<4μm, Lifetime>1,000μs Intrinsic Si:- [100] 6″ 675 P/P FZ >10,000 SEMI Prime (57.5mm) Intrinsic Si:- [100] 6″ 675 P/P FZ >10,000 SEMI [...]
PAM XIAMEN offers 100mm Si wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2485 p–type Si:B [100] 4″ 3000 P/E 1–100 SEMI Prime, 1Flat, Individual cst, Groups of 7 and 10 wafers PAM2486 p–type Si:B [100] 4″ 3000 P/E 1–30 SEMI, 2Flats, Individual cst PAM2487 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, TTV<8μm PAM2488 p–type Si:B [100] 4″ 3175 P/P 1–10 SEMI Prime, 2Flats, Individual cst, [...]
