PAM XIAMEN offers Pyrolytic Boron Nitride.
Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production.
Good [...]
2019-04-18meta-author
PAM-XIAMEN can supply AlN single crystal substrate, additional specification please refer to https://www.powerwaywafer.com/aln-substrate.html.
The main n-type AlN candidate dopants are oxygen (O) and silicon (Si), while for p-type AlN, they are magnesium (Mg) and beryllium (Be). So far, the success rate of Mg and O [...]
2024-04-15meta-author
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of [...]
Monocrystalline silicon is widely used in microelectronic applications due to its low cost, mature manufacturing process, high carrier mobility, and long-term stability. And the growing silicon wafers applied in optoelectronic applications, such as photodetector, takes up a small portion. Monocrystalline silicon has a good [...]
2023-04-14meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
280
P/E
0.5-0.6
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/E
0.08-0.10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
0.073-0.090
SEMI Prime,
p-type Si:B
[100]
2″
250
P/P
0.02-0.04
SEMI Prime
p-type Si:B
[100]
2″
225
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
1000
P/P
0.015-0.045
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
0.008-0.095
SEMI Prime
p-type Si:B
[100-4°]
2″
300
P/P
0.003-0.004
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
300
P/E
0.0026-0.0029
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.0023-0.0029
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.001-0.006
SEMI Prime,
p-type Si:B
[100-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
280
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
Prime, NO Flats
p-type Si:B
[100]
2″
500
P/P
0.001-0.005
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
300
P/E
20-25
SEMI Prime
p-type Si:B
[111]
2″
380
P/P
10-20
SEMI Prime
p-type Si:B
[111-2° towards[112]]
2″
1000
P/P
10-30
SEMI Prime
p-type Si:B
[111]
2″
500
P/P
2.4-2.6
SEMI Prime
p-type [...]
2019-03-07meta-author
What is GaAs?
GaAs(Gallium arsenide) is a compound semiconductor material,a mixture of two elements, gallium (Ga) and arsenic (As). The uses of Gallium arsenide are varied and include being used in LED/LD, field-effect transistors (FETs), and integrated circuits (ICs).
GaAs Basic Parameters at 300K
Crystal structure
Zinc Blende
Group of [...]
2012-05-14meta-author