Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
There are many electronic power devices made of silicon carbide, and the most popular one is the inverter for electric vehicles. What is an inverter? The inverter is an device, which changes the direct current into the alternating current. 1. An Indispensable Inverter for Electric [...]
PAM XIAMEN offers 2004nm laser diode wafers. Available Center Wavelengths: 1970 nm – 2051 nm Wavelength Tolerance: +/- 1nm CW Output Power (typical): 3mW (out of fiber) SMSR (typical): >40 dB Optical Linewidth: < 1.5 MHz Temperature Tuning Coefficient (typical): 0.1 nm/°C Current Tuning Coefficient (typical): 12 pm/mA Slope Efficiency (typical): 0.12 [...]
780nm laser wafers Structure1: 780nm LD structures P+ GaAs P>5E19, d=0.15μm P- AlGaInP and undoped AlGaInP d~1.5μm Undoped GaInAsP QW PL:765+-10nm Undoped AlGaInP and N- AlGaInP , d~1.5μm N GaAs buffer N GaAs substrate N=(0.4~4)×1018 d=350~625μm (100) 10°off <111>A Structure2: Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 780nm [...]
Red Infrared AlGaAs /GaAs LED Epi-Wafer PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs /GaAs LED epi-wafer with wavelength 850-880 nm and 890-910nm: Structure of infrared AlGaAs /GaAs LED epi-wafer: PAM-190723-LED Structure Thickness, um Type Composition CC, cm-3 Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018 Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018 Active layer – GaAs undoped – Al0,2Ga0,8As Barrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017 Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018 (х=0,3-0,35) Stop layer 0.1 – AlхGa1-хAs – (х=0,9-1) Buffer [...]
V-shaped defects in InGaN/GaN multiquantum wells InGaN/GaN multiquantum well (MQW) structures have been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition. From cross-sectional transmission electron microscopy (TEM), a number of V-shaped defects has been observed on the surface which are associated with mixed [...]
InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked InP(111)B substrate. This technique [...]
