Evaluation of the quality of commercial silicon carbide wafers by an optical non-destructive inspection technique
There is a great need for an in-line, high-speed and non-destructive inspection system capable of evaluating and analyzing the quality SiC wafers for SiC power devices. We have examined whether [...]
This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out of the n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that the GF is dependent on the piezoresistor’s length and width. Piezoresistors [...]
2018-01-18meta-author
PAM XIAMEN offers Silicon Nitride film on Silicon Wafer.
Silicon Nitride Film (LPCVD) on Silicon Wafer, 0.3um / 4″ — Si3N4-Si-4-300nm
Silicon Nitride Film (PE-CVD) on Silicon Wafer, 100nm / 4″ — Si3N4-Si-4-100nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-29meta-author
Silicon carbide of Ni/6H-SiC and Ti/4H-SiC type Schottky diode current-voltage characteristics modelling
On the base of the physical analytical models based on Poisson’s equation, drift–diffusion and continuity equations the forward current–voltage characteristics of 6H-SiC and 4H-SiC type Schottky diode with Ni and Ti Schottky contact [...]
2018-04-19meta-author
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
600 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
340 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
>200
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
50
n- Si:P
36±4
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
5.4±0.7
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
66 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
78
n- Si:P
25 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/EOx
78
n- Si:P
20 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
17.5 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
60±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
70±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
22.5
p- Si:B
15±10%
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
6±0.9
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
38
p- [...]
2019-03-08meta-author
PAM XIAMEN offers single crystal LiTaO3.
LiTaO3 X-cut
LiTaO3 optical grade, X-cut, 10x10x0.5mm, 2 SP
LiTaO3 saw grade, X-cut, 10x10x0.5mm, 1sp
LiTaO3 saw grade, X-cut, 3″ Dia x 0.5mm wafer, 1sp
LiTaO3, 4″ wafer, specific parameters as follows:
4″ LT Wafer Specification
Diameter
100.0±0.5mm
Orientation Flat (OF)
30±2mm
Second Refer. Flat [...]
2019-05-08meta-author