2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
2-3.Wafer Flat Length
Linear dimension of the at measured with ANSI certied digital calipers on a sample of one wafer per ingot.
3-1. Large Point Defects Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.
2-37.Test Grade Test Grade: A silicon carbide wafer of lower quality than Prime, and used primarily for testing processes. SEMI indicates the bulk, surface, and physical properties required to label silicon carbide wafers as “Test Wafers”.
5-6-4 SiC High-Power Switching Devices The inherent material properties and basic physics behind the large theoretical benefits of SiC over silicon for power switching devices were discussed Section 5.3.2. Similarly, it was discussed in Section 5.4.5 that crystallographic defects found in SiC wafers and epilayers [...]
2-23.Micropipe density A micropipe, also referred to as “micropore”, “microtube”, “capillary defect “or “pinhole defect”, is a crystallographic defect in a single crystal substrate.It is a important parameter to manufacturers of silicon carbide (SiC) substrates which are used in a variety of industries such as [...]
3-9. Comet Tails Comet tails have a discrete head and trailing tail. These features are aligned parallel to the major at. Usually, all comet tails tend to be of the same length. Count once per occurrence. Two comet tails within 200 microns count as [...]
1-1.lattice parameter The lattice constant, or lattice parameter, refers to the constant distance between unit cells in a crystal lattice. Lattices in three dimensions generally have three lattice constants, referred to as a, b, and c. However, in the special case of cubic crystal structures, [...]
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