2-33.P type
A semiconductor has electrical conductivity between that of a conductor and an insulator. Semiconductors differ from metals in their characteristic property of decreasing electrical resistivity with increasing temperature.Semiconductors can also display properties of passing current more easily in one direction than the other, [...]
2018-06-28meta-author
In solid state physics, a band gap, also called an energy gap or bandgap, is an energy range in a solid where no electron states can exist. In graphs of the electronic band structure of solids, the band gap generally refers to the energy [...]
2018-06-28meta-author
5-3-1 High-Temperature Device Operation
The wide bandgap energy and low intrinsic carrier concentration of SiC allow SiC to maintain
semiconductor behavior at much higher temperatures than silicon, which in turn permits SiC semiconductor
device functionality at much higher temperatures than silicon . As discussed in basic
semiconductor electronic [...]
2018-06-28meta-author
SILICON CARBIDE (SiC) materials are currently metamorphosing from research and development into a market driven manufacturing product. SiC substrates are currently used as the base for a large fraction of the world production of green, blue, and ultraviolet light-emitting diodes (LEDs). Emerging markets for [...]
2018-06-28meta-author
2-13.Hex Plate
Hexagonal shaped platelets on the surface of the wafer which appear silver in color to the unaided eye, under diffuse illumination.
2018-06-28meta-author
2-21.Usable Area
A cumulative subtraction of all noted defect areas from the frontside wafer quality area within the edge exclusion zone. The remaining percent value indicates the proportion of the frontside surface to be free of all noted defects (does not include edge exclusion).
2018-06-28meta-author