Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a [...]
2018-01-30meta-author
GaN-on-Si blue/white LEDs: epitaxy, chip, and package
The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet [...]
2018-04-13meta-author
InGaP / GaAs heterojunction bipolar transistor (HBT) has become one of the highly competitive and promising high-speed solid-state devices in the current microwave and millimeter wave field due to its high reliability, low cost, and relatively mature technology. PAM-XIAMEN provide InGaP / GaAs HBT wafers. [...]
2023-07-03meta-author
PAM XIAMEN offers YSZ (Y2O3 stabilized ZrO2)single crystal wafer.
YSZ crystal is grown by “cold crucible” method. It is very difficult to get a larger size YSZ crystal. PAM XIAMEN supplies YSZ crystal wafer up to 2″ diameter.
YSZ Substrates (100)
1、Square YSZ (100) [...]
2019-05-21meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 525+/-25um.
Si, 150mm dia. SSP
525+/-25 thick
N type Phos or antimony
resistivity 0.01-0.2 ohm-cm.
with 200A thermal OX and 1200A LPCVD nitride – stoichiometric
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-06-28meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -1
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com.
2020-03-10meta-author