PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm
Specifications Au/Ti/SiO2/Si substrate:
1.Structure: Au/Ti/ SiO2 on Si substrate
Flim thickness:
Au(111)=50 nm
Ti=2 nm
SiO2=300 nm
2.Substrate spec:
Material:Si substrate
Size: 4″ dia.
Orientation:(100)
Type:P type
Dopant:B doped
Thickness:525 um
Grade: [...]
2019-04-26meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University,Shandong Univerity, university of south carolina,Caltech Faraon lab(USA),University of California, [...]
2019-10-29meta-author
THz Generation Process in LT-GaAs
Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a [...]
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
DSP
Phosphorus
N
100
0,0 ± 0,0
110 ± 1
0.0 ± 1.0°
1 – 5 Ohmcm
200 ± 0.5 mm
650 ± 5 µm
20
3
35
8
DSP
Phosphorus
N
100
0,0 ± 0,0
110 ± 1
0.0 ± 0.5°
0.7 – 5.0 [...]
2019-02-25meta-author
Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector
Near-infrared reflectance spectra of 5 μm thick low-temperature (LT) GaAs films on GaAs/AlAs Bragg reflectors (BRs) have been studied by model calculations as a function of the linear absorption coefficient of the films αf. [...]
GaN HEMT RF Epitxial Wafer on Si substrate, which is a wide bandgap semiconductor, can be offered by PAM-XIAMEN. The GaN HEMT on Si wafer has obvious advantages in the high-power, high-frequency application field. As for the GaN HEMT RF devices, they include PA, LNA, [...]
2019-05-17meta-author