PAM XIAMEN offers Aluminum on Silicon Wafer.
Aluminum Film on Silicom Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:<0.005 ohm.cm
Aluminum Film on Silicon Wafer , 3 microns / 4″ — Al-Si-100-3um ,Si(100) N-type R:1-10 ohm.cm
Aluminum Film on Silicon Wafer, [...]
2019-04-26meta-author
PAM-XIAMEN offers (20-2-1) Plane Semi-insulating Freestanding GaN Substrate, which is semiconductor material for the development of iii-nitride device, microelectronic devices and optoelectronic devices. The following specification of free standing GaN crystal substrate is for sale.
1. Semi-insulating Freestanding GaN Substrate Specification
Item
PAM-FS-GAN(20-2-1)-SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(20-21)/(20-2-1) plane off angle toward A-axis 0 ±0.5°
(20-21)/(20-2-1) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
>106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front [...]
2020-09-02meta-author
Semiconductor GaAs materials are mainly used in optical communication active devices, semiconductor light emitting diodes (LEDs), high-efficiency solar cells, and Hall devices. Moreover, GaAs optoelectronic devices have important applications in household appliances, industrial instruments, large screen displays, office automation equipment, traffic management, etc. To [...]
2023-03-03meta-author
AlGaInP LED Chip Sepcification
· Orange LED Wafer Substrate:
P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate
·Chip Sepcification (Base on 7mil*7mil chips)
Parameter
Chip Size
7mil(±1mil)*7mil(±1mil)
Thickness
7mil(±1mil)
P Electrode
U/L
N Electrode
AU
Structure
Such as right-shown
·Optical-elctric characters
Parameter
Condition
Min.
Typ
Max.
Unit
Forward voltage
If=10μA
1.35
┄
┄
V
Reverse voltage
If=20mA
┄
┄
2.2
V
Reverse current
V=10V
┄
┄
2
μm
Wavelength
If=20mA
565
┄
575
nm
Half wave width
If=20mA
┄
10
┄
nm
·Light intensity characters
Brightness code
LA
LB
LC
LD
LE
LF
LG
LH
IV(mcd)
10-15
15-20
20-25
25-30
30-35
35-40
40-50
50-60
Source:PAM-XIAMEN
If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email [...]
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
5 x 5 [...]
2019-05-15meta-author
Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm−3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT [...]
2019-11-07meta-author